开关电源mos管型号

开关电源概述

开(kai)关模式电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)（Switch Mode Power Supply，简称SMPS），又称交换(huan)式电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)、开(kai)关变换(huan)器，是(shi)一(yi)种高频化电(dian)(dian)(dian)(dian)(dian)(dian)能转(zhuan)(zhuan)换(huan)装(zhuang)置，是(shi)电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)供(gong)应(ying)器的(de)一(yi)种。其功(gong)能是(shi)将一(yi)个位准的(de)电(dian)(dian)(dian)(dian)(dian)(dian)压，透过不同形式的(de)架构(gou)转(zhuan)(zhuan)换(huan)为(wei)用户端所需求的(de)电(dian)(dian)(dian)(dian)(dian)(dian)压或电(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)。开(kai)关电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)的(de)输入多半(ban)是(shi)交流(liu)(liu)电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)（例如(ru)市电(dian)(dian)(dian)(dian)(dian)(dian)）或是(shi)直(zhi)流(liu)(liu)电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)，而输出多半(ban)是(shi)需要直(zhi)流(liu)(liu)电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)的(de)设备，例如(ru)个人(ren)电(dian)(dian)(dian)(dian)(dian)(dian)脑(nao)，而开(kai)关电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)就进行两者(zhe)之(zhi)间电(dian)(dian)(dian)(dian)(dian)(dian)压及(ji)电(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)的(de)转(zhuan)(zhuan)换(huan)。

开关电源mos管型号原厂

开关电(dian)源mos管型号供应商(shang)概述(shu)，深圳(zhen)市利(li)盈娱乐半(ban)导(dao)体(ti)(ti)科技(ji)有限公司(si)（简称KIA半(ban)导(dao)体(ti)(ti)）.是一(yi)家专(zhuan)业从(cong)事中(zhong)、大、功率(lv)场效应管(MOSFET)、快(kuai)速恢复(fu)二极(ji)管、三(san)端稳(wen)压管开发(fa)设计(ji)，集研发(fa)、生产和销(xiao)售为一(yi)体(ti)(ti)的(de)国(guo)家高新技(ji)术企业。

KIA半(ban)导体，已经拥有了独立的(de)研发中(zhong)心，研发人员以来自(zi)韩国(台湾)超(chao)一(yi)流(liu)团队，可以快速根据客(ke)户应(ying)用领域(yu)的(de)个性(xing)来设(she)计方案，同时引进多(duo)台国外(wai)先进设(she)备(bei)，业(ye)务(wu)含括(kuo)功(gong)率器(qi)件的(de)直流(liu)参(can)数检测、雪(xue)崩能量(liang)检测、可靠性(xing)实(shi)验、系统分析(xi)(xi)、失效分析(xi)(xi)等(deng)领域(yu)。

强大的研发平台，使(shi)得KIA在工(gong)艺制造(zao)、产品设(she)计方面拥(yong)有(you)知识产权35项，并掌握多项场效应(ying)管核(he)心制造(zao)技术(shu)。自主研发已经成为了企业的核(he)心竞争力。

KIA半导(dao)体的(de)产(chan)品涵盖工业、新(xin)能(neng)源、交通(tong)运输(shu)、绿色照明四(si)大(da)领(ling)域，不仅包(bao)括光伏逆(ni)变及无(wu)人(ren)机、充电桩、这类新(xin)兴(xing)能(neng)源，也涉(she)及汽车(che)配(pei)件、LED照明等家(jia)庭用品。KIA专注(zhu)于(yu)产(chan)品的(de)精细化与革新(xin)，力求为客(ke)户提供最具(ju)行业领(ling)先、品质上乘的(de)科(ke)技产(chan)品。

开关电源mos管型号表大全

以下(xia)是KIA半导体开(kai)关电源mos管型号表大全(quan)：

5种常用开关电源MOSFET驱动电路解析

在(zai)使用MOSFET设计开(kai)关电源(yuan)时(shi)，大部(bu)分(fen)人都(dou)会(hui)(hui)考(kao)虑(lv)MOSFET的(de)导通电阻、最(zui)大电压、最(zui)大电流。但(dan)很(hen)多(duo)时(shi)候(hou)也仅仅考(kao)虑(lv)了这些因素，这样(yang)的(de)电路也许可以(yi)正常工作(zuo)，但(dan)并不是一(yi)个(ge)好的(de)设计方案。更细致的(de)，MOSFET还(hai)应考(kao)虑(lv)本(ben)身寄生的(de)参数。对一(yi)个(ge)确定的(de)MOSFET，其驱(qu)动电路，驱(qu)动脚输出的(de)峰值(zhi)电流，上(shang)升速(su)率(lv)等，都(dou)会(hui)(hui)影响(xiang)MOSFET的(de)开(kai)关性能。

当电源(yuan)IC与(yu)MOS管选定之后， 选择(ze)合适的驱动电路(lu)来连接电源(yuan)IC与(yu)MOS管就显得尤其重要了(le)。

一(yi)个好的MOSFET驱(qu)动(dong)电路有(you)以下几点要求：

(1)开(kai)(kai)关管开(kai)(kai)通瞬时，驱动(dong)电路应能提(ti)供足够大的充电电流(liu)使MOSFET栅源(yuan)极(ji)间电压迅速(su)上(shang)升(sheng)到(dao)所需值(zhi)，保证开(kai)(kai)关管能快速(su)开(kai)(kai)通且不存在上(shang)升(sheng)沿(yan)的高频振(zhen)荡。

(2)开关导通(tong)期间(jian)驱动电路能(neng)保(bao)证(zheng)MOSFET栅(zha)源极(ji)间(jian)电压保(bao)持稳定且可靠导通(tong)。

(3)关(guan)断瞬间驱动电(dian)(dian)路(lu)能(neng)(neng)提供(gong)一个尽可能(neng)(neng)低阻抗的(de)通路(lu)供(gong)MOSFET栅源极间电(dian)(dian)容(rong)电(dian)(dian)压(ya)的(de)快(kuai)(kuai)速(su)泄放，保证开关(guan)管(guan)能(neng)(neng)快(kuai)(kuai)速(su)关(guan)断。

(4)驱动(dong)电路结构(gou)简(jian)单可靠、损耗(hao)小。

(5)根(gen)据情况施加隔离。

（一）电源IC直接驱动MOSFET

图1 IC直接驱动MOSFET

电(dian)(dian)(dian)源IC直接驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)是(shi)我们最常用的(de)(de)(de)驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)方式，同时也(ye)是(shi)最简单(dan)的(de)(de)(de)驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)方式，使(shi)用这种驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)方式，应该注意几(ji)个参数以(yi)及这些参数的(de)(de)(de)影响。第一(yi)，查看一(yi)下电(dian)(dian)(dian)源IC手(shou)册，其(qi)最大驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)峰值(zhi)(zhi)电(dian)(dian)(dian)流，因为不(bu)(bu)同芯(xin)片，驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)能(neng)(neng)力(li)(li)(li)很多(duo)时候是(shi)不(bu)(bu)一(yi)样的(de)(de)(de)。第二，了解(jie)一(yi)下MOSFET的(de)(de)(de)寄(ji)生(sheng)电(dian)(dian)(dian)容，如(ru)(ru)图(tu) 1中C1、C2的(de)(de)(de)值(zhi)(zhi)。如(ru)(ru)果C1、C2的(de)(de)(de)值(zhi)(zhi)比(bi)较大，MOS管(guan)导(dao)通的(de)(de)(de)需要的(de)(de)(de)能(neng)(neng)量就比(bi)较大，如(ru)(ru)果电(dian)(dian)(dian)源IC没有比(bi)较大的(de)(de)(de)驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)峰值(zhi)(zhi)电(dian)(dian)(dian)流，那么管(guan)子导(dao)通的(de)(de)(de)速度就比(bi)较慢。如(ru)(ru)果驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)能(neng)(neng)力(li)(li)(li)不(bu)(bu)足，上升沿可能(neng)(neng)出现高频振荡，即使(shi)把(ba)图(tu) 1中Rg减小(xiao)(xiao)，也(ye)不(bu)(bu)能(neng)(neng)解(jie)决(jue)问题! IC驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)能(neng)(neng)力(li)(li)(li)、MOS寄(ji)生(sheng)电(dian)(dian)(dian)容大小(xiao)(xiao)、MOS管(guan)开关速度等因素(su)，都影响驱(qu)(qu)(qu)(qu)(qu)(qu)动(dong)电(dian)(dian)(dian)阻(zu)阻(zu)值(zhi)(zhi)的(de)(de)(de)选择，所以(yi)Rg并(bing)不(bu)(bu)能(neng)(neng)无限减小(xiao)(xiao)。

（二）电源IC驱动能力不足时

如(ru)果选择(ze)MOS管寄生(sheng)电(dian)(dian)容比较大，电(dian)(dian)源IC内部的驱(qu)(qu)(qu)动(dong)(dong)能力(li)又不(bu)足时(shi)，需要在驱(qu)(qu)(qu)动(dong)(dong)电(dian)(dian)路(lu)(lu)(lu)上增(zeng)强驱(qu)(qu)(qu)动(dong)(dong)能力(li)，常使用(yong)图腾柱电(dian)(dian)路(lu)(lu)(lu)增(zeng)加电(dian)(dian)源IC驱(qu)(qu)(qu)动(dong)(dong)能力(li)，其电(dian)(dian)路(lu)(lu)(lu)如(ru)下图虚线框所示(shi)。

图2 图腾柱驱动MOS

这种(zhong)驱动(dong)电路作用在于，提(ti)升电流提(ti)供(gong)能力，迅速(su)完成对(dui)于栅(zha)极输入电容电荷(he)的(de)充电过程。这种(zhong)拓(tuo)扑增(zeng)加(jia)了导通所需要的(de)时(shi)间(jian)，但是减(jian)少了关断时(shi)间(jian)，开(kai)关管能快(kuai)速(su)开(kai)通且避免上(shang)升沿的(de)高频振(zhen)荡。

（三）驱动电路加速MOS管关断时间

图3 加速(su)MOS关断

关(guan)(guan)(guan)断(duan)(duan)瞬间(jian)驱(qu)动电(dian)(dian)路能提(ti)供(gong)一个尽可能低阻(zu)抗(kang)的(de)(de)通路供(gong)MOSFET栅源极(ji)间(jian)电(dian)(dian)容电(dian)(dian)压快(kuai)速泄放，保证开(kai)关(guan)(guan)(guan)管能快(kuai)速关(guan)(guan)(guan)断(duan)(duan)。为使(shi)栅源极(ji)间(jian)电(dian)(dian)容电(dian)(dian)压的(de)(de)快(kuai)速泄放，常(chang)在驱(qu)动电(dian)(dian)阻(zu)上并(bing)联(lian)一个电(dian)(dian)阻(zu)和一个二(er)极(ji)管，如图2所示，其中D1常(chang)用的(de)(de)是(shi)快(kuai)恢复(fu)二(er)极(ji)管。这使(shi)关(guan)(guan)(guan)断(duan)(duan)时间(jian)减(jian)小(xiao)，同时减(jian)小(xiao)关(guan)(guan)(guan)断(duan)(duan)时的(de)(de)损耗。Rg2是(shi)防止关(guan)(guan)(guan)断(duan)(duan)的(de)(de)时电(dian)(dian)流(liu)过大(da)，把(ba)电(dian)(dian)源IC给烧掉(diao)。

图4 改(gai)进型(xing)加速MOS关断

在第二点介绍的(de)图腾(teng)柱电(dian)(dian)(dian)(dian)(dian)(dian)路(lu)也有加快关(guan)断(duan)作用。当电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)IC的(de)驱动能力足够时，对(dui)图 2中电(dian)(dian)(dian)(dian)(dian)(dian)路(lu)改进可以加速(su)MOS管关(guan)断(duan)时间，得到(dao)如(ru)图 4所示电(dian)(dian)(dian)(dian)(dian)(dian)路(lu)。用三极(ji)管来泄放(fang)(fang)栅(zha)源(yuan)极(ji)间电(dian)(dian)(dian)(dian)(dian)(dian)容电(dian)(dian)(dian)(dian)(dian)(dian)压是(shi)比较(jiao)常(chang)见的(de)。如(ru)果Q1的(de)发射(she)极(ji)没有电(dian)(dian)(dian)(dian)(dian)(dian)阻，当PNP三极(ji)管导通时，栅(zha)源(yuan)极(ji)间电(dian)(dian)(dian)(dian)(dian)(dian)容短接，达到(dao)最短时间内(nei)把电(dian)(dian)(dian)(dian)(dian)(dian)荷(he)放(fang)(fang)完，最大限度减小关(guan)断(duan)时的(de)交叉(cha)损耗。与图 3拓扑相比较(jiao)，还有一个好处，就是(shi)栅(zha)源(yuan)极(ji)间电(dian)(dian)(dian)(dian)(dian)(dian)容上的(de)电(dian)(dian)(dian)(dian)(dian)(dian)荷(he)泄放(fang)(fang)时电(dian)(dian)(dian)(dian)(dian)(dian)流不(bu)经过电(dian)(dian)(dian)(dian)(dian)(dian)源(yuan)IC，提高了可靠性。

（四）驱动电路加速MOS管关断时间

图(tu)5 隔(ge)离驱动

为(wei)(wei)了满(man)足如(ru)图所示(shi)高端MOS管的(de)驱动(dong)，经常(chang)会采(cai)用变(bian)压器(qi)驱动(dong)，有时(shi)为(wei)(wei)了满(man)足安全隔(ge)离也(ye)使用变(bian)压器(qi)驱动(dong)。其中R1目的(de)是抑制PCB板上寄生的(de)电(dian)感与C1形成LC振荡，C1的(de)目的(de)是隔(ge)开直(zhi)流，通过(guo)交流，同时(shi)也(ye)能防止磁芯饱和(he)。

（五）当源极输出为高电压时的驱动

当源(yuan)极输出为高电(dian)(dian)压(ya)的情况时，我们需要采用偏(pian)置(zhi)电(dian)(dian)路(lu)达到电(dian)(dian)路(lu)工(gong)作的目的，既(ji)我们以源(yuan)极为参考点，搭建偏(pian)置(zhi)电(dian)(dian)路(lu)，驱(qu)动(dong)(dong)电(dian)(dian)压(ya)在两个电(dian)(dian)压(ya)之间波动(dong)(dong)，驱(qu)动(dong)(dong)电(dian)(dian)压(ya)偏(pian)差(cha)由低电(dian)(dian)压(ya)提供，如(ru)下(xia)图

图6 源极输出(chu)为高电(dian)压时的驱动电(dian)路

除了以上驱(qu)动(dong)电(dian)路之外，还有(you)很多其它形式的(de)驱(qu)动(dong)电(dian)路。对(dui)于各种各样的(de)驱(qu)动(dong)电(dian)路并没有(you)一种驱(qu)动(dong)电(dian)路是最好(hao)的(de)，只有(you)结合具体应(ying)用(yong)，选(xuan)择最合适的(de)驱(qu)动(dong)。

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