碳(tan)化(hua)(hua)硅(gui)(gui)材料半(ban)(ban)导(dao)体，虽然随着(zhe)技(ji)术(shu)的发展，目前碳(tan)化(hua)(hua)硅(gui)(gui)成本下(xia)降(jiang)很(hen)多(duo)(duo)，但是(shi)据(ju)市场(chang)...碳(tan)化(hua)(hua)硅(gui)(gui)材料半(ban)(ban)导(dao)体，虽然随着(zhe)技(ji)术(shu)的发展，目前碳(tan)化(hua)(hua)硅(gui)(gui)成本下(xia)降(jiang)很(hen)多(duo)(duo)，但是(shi)据(ju)市场(chang)价格表现(xian)同(tong)类型的硅(gui)(gui)材料与碳(tan)化(hua)(hua)硅(gui)(gui)材料的半(ban)(ban)导(dao)体器件价格相差十倍有余。碳(tan)化(hua)(hua)硅(gui)(gui)单晶体可...
MOS管(guan)本(ben)身的(de)输入电(dian)(dian)阻很高，而栅(zha)-源(yuan)极(ji)间电(dian)(dian)容又非(fei)常小，所以极(ji)易受外(wai)(wai)界(jie)电(dian)(dian)磁(ci)场或静(jing)...MOS管(guan)本(ben)身的(de)输入电(dian)(dian)阻很高，而栅(zha)-源(yuan)极(ji)间电(dian)(dian)容又非(fei)常小，所以极(ji)易受外(wai)(wai)界(jie)电(dian)(dian)磁(ci)场或静(jing)电(dian)(dian)的(de)感应而带电(dian)(dian)，而少量电(dian)(dian)荷(he)就可在极(ji)间电(dian)(dian)容上形成相(xiang)当高的(de)电(dian)(dian)压(U=Q/C)，将管(guan)子损坏...
MOS管(guan)(guan)(guan)有(you)用(yong)(yong)的(de)(de)管(guan)(guan)(guan)脚(jiao)就是(shi)三个(ge)：源(yuan)极(ji)(ji)、漏(lou)极(ji)(ji)、栅极(ji)(ji)。多余(yu)的(de)(de)管(guan)(guan)(guan)脚(jiao)或者是(shi)同(tong)名管(guan)(guan)(guan)脚(jiao)（在...MOS管(guan)(guan)(guan)有(you)用(yong)(yong)的(de)(de)管(guan)(guan)(guan)脚(jiao)就是(shi)三个(ge)：源(yuan)极(ji)(ji)、漏(lou)极(ji)(ji)、栅极(ji)(ji)。多余(yu)的(de)(de)管(guan)(guan)(guan)脚(jiao)或者是(shi)同(tong)名管(guan)(guan)(guan)脚(jiao)（在内部和漏(lou)极(ji)(ji)、栅极(ji)(ji)相连(lian)，特别是(shi)有(you)些大功率管(guan)(guan)(guan)），或者是(shi)空脚(jiao)（没有(you)内部连(lian)接，只(zhi)起焊(han)接...
Cds---漏(lou)(lou)-源(yuan)(yuan)(yuan)(yuan)(yuan)电(dian)容(rong)(rong) Cdu---漏(lou)(lou)-衬底(di)电(dian)容(rong)(rong) Cgd---栅(zha)-源(yuan)(yuan)(yuan)(yuan)(yuan)电(dian)容(rong)(rong) Cgs---漏(lou)(lou)-源(yuan)(yuan)(yuan)(yuan)(yuan)电(dian)容(rong)(rong) Cis...Cds---漏(lou)(lou)-源(yuan)(yuan)(yuan)(yuan)(yuan)电(dian)容(rong)(rong) Cdu---漏(lou)(lou)-衬底(di)电(dian)容(rong)(rong) Cgd---栅(zha)-源(yuan)(yuan)(yuan)(yuan)(yuan)电(dian)容(rong)(rong) Cgs---漏(lou)(lou)-源(yuan)(yuan)(yuan)(yuan)(yuan)电(dian)容(rong)(rong) Ciss---栅(zha)短路共(gong)源(yuan)(yuan)(yuan)(yuan)(yuan)输入(ru)电(dian)容(rong)(rong) Coss---栅(zha)短路共(gong)源(yuan)(yuan)(yuan)(yuan)(yuan)输出电(dian)容(rong)(rong) Crss---栅(zha)短路共(gong)源(yuan)(yuan)(yuan)(yuan)(yuan)反(fan)向传输电(dian)...
测量场效(xiao)应管(guan)(guan)的(de)(de)(de)(de)源(yuan)极(ji)(ji)与(yu)(yu)漏(lou)(lou)(lou)极(ji)(ji)、栅(zha)极(ji)(ji)与(yu)(yu)源(yuan)极(ji)(ji)、栅(zha)极(ji)(ji)与(yu)(yu)漏(lou)(lou)(lou)极(ji)(ji)、栅(zha)极(ji)(ji)Ｇ1与(yu)(yu)栅(zha)极(ji)(ji)Ｇ2之间(jian)的(de)(de)(de)(de)电(dian)...测量场效(xiao)应管(guan)(guan)的(de)(de)(de)(de)源(yuan)极(ji)(ji)与(yu)(yu)漏(lou)(lou)(lou)极(ji)(ji)、栅(zha)极(ji)(ji)与(yu)(yu)源(yuan)极(ji)(ji)、栅(zha)极(ji)(ji)与(yu)(yu)漏(lou)(lou)(lou)极(ji)(ji)、栅(zha)极(ji)(ji)Ｇ1与(yu)(yu)栅(zha)极(ji)(ji)Ｇ2之间(jian)的(de)(de)(de)(de)电(dian)阻(zu)值同场效(xiao)应管(guan)(guan)手(shou)册标明的(de)(de)(de)(de)电(dian)阻(zu)值是否相符去判别管(guan)(guan)的(de)(de)(de)(de)好坏。
半导(dao)体(ti)功(gong)率器(qi)(qi)件(jian)被广泛应用于(yu)汽车(che)电子，网(wang)络通讯等各大领(ling)域，目(mu)前最具代表性(xing)的两(liang)(liang)...半导(dao)体(ti)功(gong)率器(qi)(qi)件(jian)被广泛应用于(yu)汽车(che)电子，网(wang)络通讯等各大领(ling)域，目(mu)前最具代表性(xing)的两(liang)(liang)种功(gong)率器(qi)(qi)件(jian)即为绝缘栅(zha)MOS管场效(xiao)应晶(jing)体(ti)管(IGBT)和超结MOSFET(Super-junctionMOSFET)...
