MOS又分为(wei)兩种(zhong)(zhong)，一种(zhong)(zhong)为(wei)耗(hao)尽型(xing)（DepletionMOS），另(ling)(ling)一种(zhong)(zhong)为(wei)增强型(xing)（EnhancementM...MOS又分为(wei)兩种(zhong)(zhong)，一种(zhong)(zhong)为(wei)耗(hao)尽型(xing)（DepletionMOS），另(ling)(ling)一种(zhong)(zhong)为(wei)增强型(xing)（EnhancementMOS）。 因(yin)为(wei)场效应管(guan)拓展器的输入阻(zu)抗很高，因(yin)而耦合(he)电容能够容量较(jiao)小，不必运用电...
用测(ce)(ce)电(dian)(dian)阻(zu)法(fa)区(qu)分(fen)结(jie)型(xing)场效(xiao)(xiao)应(ying)管(guan)的电(dian)(dian)极(ji)对(dui)VMOSV沟(gou)道增强(qiang)型(xing)场效(xiao)(xiao)应(ying)管(guan)丈量跨导性(xing)能(neng)时，...用测(ce)(ce)电(dian)(dian)阻(zu)法(fa)区(qu)分(fen)结(jie)型(xing)场效(xiao)(xiao)应(ying)管(guan)的电(dian)(dian)极(ji)对(dui)VMOSV沟(gou)道增强(qiang)型(xing)场效(xiao)(xiao)应(ying)管(guan)丈量跨导性(xing)能(neng)时，可用红表笔接源极(ji)S、黑表笔接漏极(ji)D，这就持(chi)平(ping)于(yu)在源、漏极(ji)之间加了一个反向电(dian)(dian)压。此...
Mosfet参数意(yi)义阐明 Features: Vds： DS击(ji)穿电(dian)(dian)压(ya)(ya).当(dang)Vgs=0V时，MOS的(de)DS所...Mosfet参数意(yi)义阐明 Features: Vds： DS击(ji)穿电(dian)(dian)压(ya)(ya).当(dang)Vgs=0V时，MOS的(de)DS所能承受的(de)最大(da)电(dian)(dian)压(ya)(ya) Rds(on)：DS的(de)导通电(dian)(dian)阻(zu).当(dang)Vgs=10V时，MOS的(de)DS之间的(de)电(dian)(dian)阻(zu) Id：...
P沟(gou)(gou)道MOS管工(gong)作原理金属氧(yang)化(hua)物半导体(ti)场效应(MOS)晶体(ti)管可分(fen)为(wei)N沟(gou)(gou)道与(yu)P沟(gou)(gou)道两(liang)(liang)大...P沟(gou)(gou)道MOS管工(gong)作原理金属氧(yang)化(hua)物半导体(ti)场效应(MOS)晶体(ti)管可分(fen)为(wei)N沟(gou)(gou)道与(yu)P沟(gou)(gou)道两(liang)(liang)大类， P沟(gou)(gou)道硅(gui)MOS场效应晶体(ti)管在N型硅(gui)衬底上有两(liang)(liang)个P+区(qu)，分(fen)别叫做源极和漏极，两(liang)(liang)极之...
MOS又(you)分(fen)(fen)为兩种(zhong)(zhong)，一(yi)(yi)种(zhong)(zhong)为耗尽型(xing)(xing)（DepletionMOS），另(ling)一(yi)(yi)种(zhong)(zhong)为增(zeng)强(qiang)型(xing)(xing)（EnhancementM...MOS又(you)分(fen)(fen)为兩种(zhong)(zhong)，一(yi)(yi)种(zhong)(zhong)为耗尽型(xing)(xing)（DepletionMOS），另(ling)一(yi)(yi)种(zhong)(zhong)为增(zeng)强(qiang)型(xing)(xing)（EnhancementMOS）。这兩种(zhong)(zhong)型(xing)(xing)态的(de)构(gou)造没有太(tai)大(da)的(de)差異，仅仅耗尽型(xing)(xing)MOS一(yi)(yi)开始在Drain-Source的(de)通(tong)道上...
MOS管最(zui)显(xian)(xian)著(zhu)的特性(xing)是开(kai)关(guan)特性(xing)好，所以(yi)被广(guang)泛(fan)应用(yong)在需要(yao)电(dian)(dian)子开(kai)关(guan)的电(dian)(dian)路中(zhong)，常(chang)见(jian)(jian)...MOS管最(zui)显(xian)(xian)著(zhu)的特性(xing)是开(kai)关(guan)特性(xing)好，所以(yi)被广(guang)泛(fan)应用(yong)在需要(yao)电(dian)(dian)子开(kai)关(guan)的电(dian)(dian)路中(zhong)，常(chang)见(jian)(jian)的如开(kai)关(guan)电(dian)(dian)源和马达驱动，也有照明(ming)调(diao)光。
