解析cool mos是什(shen)么-cool mos定义的(de)优势(shi)-KIA MOS管
信息来(lai)源：本站 日期：2018-03-12
对于Cool-MOS的简述
对(dui)(dui)于(yu)(yu)常(chang)规(gui)(gui)VDMOS 器(qi)件结(jie)(jie)构(gou)， Rdson 与(yu)BV 这(zhei)(zhei)一对(dui)(dui)矛(mao)盾(dun)关(guan)系，要(yao)(yao)(yao)想提(ti)高BV，都(dou)是(shi)从减小EPI 参(can)杂浓(nong)度着手(shou)，但(dan)是(shi)外延层又是(shi)正(zheng)向(xiang)电(dian)流(liu)流(liu)通(tong)的(de)(de)(de)通(tong)道(dao)，EPI 参(can)杂浓(nong)度减小了(le)，电(dian)阻(zu)必然变大(da)(da)(da)(da)，Rdson 就大(da)(da)(da)(da)了(le)。Rdson直接决定着MOS 单体(ti)的(de)(de)(de)损耗(hao)大(da)(da)(da)(da)小。所以(yi)对(dui)(dui)于(yu)(yu)普通(tong)VDMOS，两者矛(mao)盾(dun)不(bu)可调和(he)，这(zhei)(zhei)就是(shi)常(chang)规(gui)(gui)VDMOS的(de)(de)(de)局限性。但(dan)是(shi)对(dui)(dui)于(yu)(yu)COOLMOS，这(zhei)(zhei)个(ge)矛(mao)盾(dun)就不(bu)那么明(ming)显了(le)。通(tong)过设置(zhi)一个(ge)深入(ru)(ru)EPI 的(de)(de)(de)的(de)(de)(de)P 区(qu)(qu)(qu)(qu)，大(da)(da)(da)(da)大(da)(da)(da)(da)提(ti)高了(le)BV，同时对(dui)(dui)Rdson 上不(bu)产生影响。对(dui)(dui)于(yu)(yu)常(chang)规(gui)(gui)VDMOS，反向(xiang)耐压(ya)，主(zhu)(zhu)(zhu)要(yao)(yao)(yao)靠(kao)的(de)(de)(de)是(shi)N 型(xing)EPI 与(yu)body区(qu)(qu)(qu)(qu)界面(mian)的(de)(de)(de)PN 结(jie)(jie)，对(dui)(dui)于(yu)(yu)一个(ge)PN 结(jie)(jie)，耐压(ya)时主(zhu)(zhu)(zhu)要(yao)(yao)(yao)靠(kao)的(de)(de)(de)是(shi)耗(hao)尽(jin)(jin)(jin)(jin)区(qu)(qu)(qu)(qu)承(cheng)受，耗(hao)尽(jin)(jin)(jin)(jin)区(qu)(qu)(qu)(qu)内的(de)(de)(de)电(dian)场(chang)大(da)(da)(da)(da)小、耗(hao)尽(jin)(jin)(jin)(jin)区(qu)(qu)(qu)(qu)扩展的(de)(de)(de)宽度的(de)(de)(de)面(mian)积(ji)。常(chang)规(gui)(gui)VDSMO，P body 浓(nong)度要(yao)(yao)(yao)大(da)(da)(da)(da)于(yu)(yu)N EPI，大(da)(da)(da)(da)家也应该清(qing)楚，PN 结(jie)(jie)耗(hao)尽(jin)(jin)(jin)(jin)区(qu)(qu)(qu)(qu)主(zhu)(zhu)(zhu)要(yao)(yao)(yao)向(xiang)低参(can)杂一侧扩散，所以(yi)此结(jie)(jie)构(gou)下，P body 区(qu)(qu)(qu)(qu)域(yu)一侧，耗(hao)尽(jin)(jin)(jin)(jin)区(qu)(qu)(qu)(qu)扩展很小，基本对(dui)(dui)承(cheng)压(ya)没(mei)有多(duo)大(da)(da)(da)(da)贡献，承(cheng)压(ya)主(zhu)(zhu)(zhu)要(yao)(yao)(yao)是(shi)P body－－N EPI 在N 型(xing)的(de)(de)(de)一侧区(qu)(qu)(qu)(qu)域(yu)，这(zhei)(zhei)个(ge)区(qu)(qu)(qu)(qu)域(yu)的(de)(de)(de)电(dian)场(chang)强度是(shi)逐渐变化的(de)(de)(de)，越是(shi)靠(kao)近PN 结(jie)(jie)面(mian)，电(dian)场(chang)强度E 越大(da)(da)(da)(da)。对(dui)(dui)于(yu)(yu)COOLMOS 结(jie)(jie)构(gou)，由(you)于(yu)(yu)设置(zhi)了(le)相对(dui)(dui)P body 浓(nong)度低一些的(de)(de)(de)P region 区(qu)(qu)(qu)(qu)域(yu)，所以(yi)P 区(qu)(qu)(qu)(qu)一侧的(de)(de)(de)耗(hao)尽(jin)(jin)(jin)(jin)区(qu)(qu)(qu)(qu)会(hui)大(da)(da)(da)(da)大(da)(da)(da)(da)扩展，并且这(zhei)(zhei)个(ge)区(qu)(qu)(qu)(qu)域(yu)深入(ru)(ru)EPI 中，造成了(le)PN 结(jie)(jie)两侧都(dou)能承(cheng)受大(da)(da)(da)(da)的(de)(de)(de)电(dian)压(ya)，换句话说，就是(shi)把峰值(zhi)电(dian)场(chang)Ec 由(you)靠(kao)近器(qi)件表(biao)面(mian)，向(xiang)器(qi)件内部(bu)深入(ru)(ru)的(de)(de)(de)区(qu)(qu)(qu)(qu)域(yu)移动了(le)。
由于SJ-MOS 的(de)(de)(de)Rdson 远(yuan)远(yuan)低(di)于VDMOS，在(zai)系(xi)统(tong)电(dian)(dian)源(yuan)类产(chan)品(pin)中SJ-MOS 的(de)(de)(de)导通损耗必然较之(zhi)VDMOS要减少的(de)(de)(de)多。其大大提(ti)高了(le)系(xi)统(tong)产(chan)品(pin)上(shang)面的(de)(de)(de)单(dan)体MOSFET 的(de)(de)(de)导通损耗，提(ti)高了(le)系(xi)统(tong)产(chan)品(pin)的(de)(de)(de)效率，SJ-MOS的(de)(de)(de)这个优点(dian)在(zai)大功(gong)率、大电(dian)(dian)流类的(de)(de)(de)电(dian)(dian)源(yuan)产(chan)品(pin)产(chan)品(pin)上(shang)，优势(shi)表现的(de)(de)(de)尤为(wei)突出。
首先，同等电(dian)流(liu)以(yi)及电(dian)压规(gui)格条件下，J-MOS 的晶源面(mian)积(ji)要(yao)小于VDMOS 工艺的晶源面(mian)积(ji)，这样作(zuo)为(wei)MOS 的厂家，对于同一规(gui)格的产品，可以(yi)封装出来体(ti)积(ji)相(xiang)对较小的产品，有利于电(dian)源系(xi)统(tong)功率密度(du)的提高。
其(qi)次，由(you)(you)于SJ-MOS 的导通(tong)损耗(hao)的降低(di)从而降低(di)了电(dian)源类产(chan)品的损耗(hao)，因为这些损耗(hao)都是(shi)以热(re)(re)量的形式散(san)发出去，我们在实(shi)际(ji)中往(wang)往(wang)会增加散(san)热(re)(re)器来降低(di)MOS 单体的温升(sheng)，使(shi)其(qi)保证在合(he)适的温度(du)(du)范围内(nei)。由(you)(you)于SJ-MOS 可以有效的减少(shao)发热(re)(re)量，减小了散(san)热(re)(re)器的体积，对于一些功率稍低(di)的电(dian)源，甚至(zhi)使(shi)用SJ-MOS 后(hou)可以将散(san)热(re)(re)器彻底拿掉。有效的提高了系(xi)统电(dian)源类产(chan)品的功率密度(du)(du)。
传(chuan)统(tong)VDMOS 的栅电(dian)荷相对较大，我(wo)们在(zai)实际应用中经常会遇到(dao)由于IC 的驱动(dong)能(neng)(neng)力不(bu)(bu)足(zu)造成的温升问题，部分产(chan)品(pin)(pin)在(zai)电(dian)路(lu)设计中为(wei)了增加(jia)IC 的驱动(dong)能(neng)(neng)力，确(que)保MOSFET 的快速导(dao)通，我(wo)们不(bu)(bu)得(de)不(bu)(bu)增加(jia)推挽或(huo)其它类型的驱动(dong)电(dian)路(lu)，从而增加(jia)了电(dian)路(lu)的复(fu)杂性。SJ-MOS 的栅电(dian)容相对比较小，这(zhei)样就可以降低其对驱动(dong)能(neng)(neng)力的要求，提高了系(xi)统(tong)产(chan)品(pin)(pin)的可靠性。
由于SJ-MOS 结构的(de)(de)改变(bian)，其(qi)输出的(de)(de)节(jie)电容(rong)也(ye)有较大(da)的(de)(de)降(jiang)(jiang)低，从而(er)降(jiang)(jiang)低了其(qi)导通及关断过(guo)程(cheng)中的(de)(de)损耗。同(tong)时由于SJ-MOS 栅电容(rong)也(ye)有了响应的(de)(de)减小，电容(rong)充(chong)电时间变(bian)短，大(da)大(da)的(de)(de)提(ti)高(gao)了SJ-MOS 的(de)(de)开关速(su)度(du)。对于频率固定的(de)(de)电源来(lai)说，可以有效的(de)(de)降(jiang)(jiang)低其(qi)开通及关断损耗。提(ti)高(gao)整个电源系统(tong)的(de)(de)效率。这一点(dian)尤(you)其(qi)在频率相对较高(gao)的(de)(de)电源上，效果(guo)更加(jia)明(ming)显。
1）．场效应(ying)(ying)管(guan)的源(yuan)极(ji)S、栅极(ji)G、漏(lou)极(ji)D分别对(dui)应(ying)(ying)于(yu)三极(ji)管(guan)的发射(she)极(ji)e、基极(ji)b、集(ji)电极(ji)c，它们的作用(yong)相似，图1-6-A所示是N沟道MOS管(guan)和NPN型晶体(ti)三极(ji)管(guan)引脚，图1-6-B所示是P沟道MOS管(guan)和PNP型晶体(ti)三极(ji)管(guan)引脚对(dui)应(ying)(ying)图。
2)．场(chang)效(xiao)应管(guan)是(shi)电(dian)压控(kong)制(zhi)电(dian)流器件(jian)(jian)，由(you)VGS控(kong)制(zhi)ID，普通的晶体三极管(guan)是(shi)电(dian)流控(kong)制(zhi)电(dian)流器件(jian)(jian)，由(you)IB控(kong)制(zhi)IC。MOS管(guan)道放大系数是(shi)（跨导gm）当栅极电(dian)压改(gai)变一伏时能引(yin)起漏(lou)极电(dian)流变化(hua)多(duo)少安(an)培。晶体三极管(guan)是(shi)电(dian)流放大系数（贝(bei)塔β）当基(ji)极电(dian)流改(gai)变一毫安(an)时能引(yin)起集电(dian)极电(dian)流变化(hua)多(duo)少。
3)．场(chang)效(xiao)应(ying)管栅极和其(qi)它电(dian)(dian)(dian)极是(shi)绝缘的(de)，不(bu)产生(sheng)电(dian)(dian)(dian)流；而三(san)极管工作时基极电(dian)(dian)(dian)流IB决定集(ji)电(dian)(dian)(dian)极电(dian)(dian)(dian)流IC。因此场(chang)效(xiao)应(ying)管的(de)输入电(dian)(dian)(dian)阻比三(san)极管的(de)输入电(dian)(dian)(dian)阻高的(de)多。
4)．场效(xiao)应管只有多数载流(liu)(liu)子参与导(dao)电；三极(ji)管有多数载流(liu)(liu)子和少(shao)数载流(liu)(liu)子两种载流(liu)(liu)子参与导(dao)电，因少(shao)数载流(liu)(liu)子浓度受温度、辐射等因素影响较(jiao)大，所以场效(xiao)应管比三极(ji)管的温度稳定性(xing)好。
5)．场(chang)效应管在(zai)源极(ji)(ji)未(wei)与衬底(di)连在(zai)一(yi)起(qi)时，源极(ji)(ji)和漏极(ji)(ji)可以互(hu)换使用，且(qie)特性变化不大(da)，而(er)三极(ji)(ji)管的集(ji)电极(ji)(ji)与发(fa)射极(ji)(ji)互(hu)换使用时，其特性差异很(hen)大(da)，b 值(zhi)将减小很(hen)多(duo)。
6)．场(chang)效应管(guan)的噪(zao)(zao)声(sheng)系数很小，在低噪(zao)(zao)声(sheng)放大电路的输入级及要求信噪(zao)(zao)比(bi)较高的电路中要选用场(chang)效应管(guan)。
7)．场效应(ying)管(guan)(guan)和普(pu)通(tong)晶体三(san)极管(guan)(guan)均(jun)可(ke)组成(cheng)各种放大电路(lu)(lu)(lu)和开关电路(lu)(lu)(lu)，但(dan)是(shi)场效应(ying)管(guan)(guan)制造工艺简单，并(bing)且又(you)具(ju)有普(pu)通(tong)晶体三(san)极管(guan)(guan)不能比拟(ni)的(de)优秀特(te)性，在各种电路(lu)(lu)(lu)及(ji)应(ying)用中(zhong)正(zheng)逐步的(de)取(qu)代普(pu)通(tong)晶体三(san)极管(guan)(guan)，目前的(de)大规(gui)模(mo)和超大规(gui)模(mo)集成(cheng)电路(lu)(lu)(lu)中(zhong)，已(yi)经广泛的(de)采(cai)用场效应(ying)管(guan)(guan)。
6、在开关电源电路中；大功率MOS管和大功率晶体三极管相比MOS管的优点；
由(you)于(yu)栅(zha)源之间(jian)是(shi)(shi)(shi)二氧化硅（SiO2）绝(jue)(jue)缘(yuan)层，栅(zha)源之间(jian)的直(zhi)流电(dian)阻基本上就是(shi)(shi)(shi)SiO2绝(jue)(jue)缘(yuan)电(dian)阻，一(yi)般(ban)达100MΩ左右，交流输入阻抗基本上就是(shi)(shi)(shi)输入电(dian)容(rong)的容(rong)抗。由(you)于(yu)输入阻抗高(gao)，对(dui)激励信号不(bu)会产生压降，有(you)电(dian)压就可以驱(qu)动，所(suo)以驱(qu)动功率极小(xiao)（灵(ling)敏度高(gao)）。一(yi)般(ban)的晶体(ti)(ti)三(san)极管(guan)必需有(you)基极电(dian)压Vb，再产生基极电(dian)流Ib，才能驱(qu)动集(ji)电(dian)极电(dian)流的产生。晶体(ti)(ti)三(san)极管(guan)的驱(qu)动是(shi)(shi)(shi)需要功率的（Vb×Ib）。
MOSFET的(de)(de)开关(guan)(guan)(guan)速(su)度和输(shu)入(ru)的(de)(de)容(rong)性(xing)(xing)(xing)特(te)性(xing)(xing)(xing)的(de)(de)有很大关(guan)(guan)(guan)系，由于输(shu)入(ru)容(rong)性(xing)(xing)(xing)特(te)性(xing)(xing)(xing)的(de)(de)存(cun)在(zai)，使开关(guan)(guan)(guan)的(de)(de)速(su)度变慢，但(dan)是在(zai)作为开关(guan)(guan)(guan)运用时(shi)，可降低驱动电(dian)(dian)路内阻(zu)，加(jia)(jia)快开关(guan)(guan)(guan)速(su)度（输(shu)入(ru)采用了后述的(de)(de)“灌流电(dian)(dian)路”驱动，加(jia)(jia)快了容(rong)性(xing)(xing)(xing)的(de)(de)充放(fang)电(dian)(dian)的(de)(de)时(shi)间(jian)）。MOSFET只靠(kao)多子导电(dian)(dian)，不存(cun)在(zai)少子储(chu)存(cun)效应，因(yin)而关(guan)(guan)(guan)断过程非常迅速(su)，开关(guan)(guan)(guan)时(shi)间(jian)在(zai)10—100ns之间(jian)，工(gong)作频率可达100kHz以(yi)上，普通的(de)(de)晶(jing)体三(san)极管由于少数载流子的(de)(de)存(cun)储(chu)效应，使开关(guan)(guan)(guan)总有滞后现象(xiang)(xiang)，影响(xiang)开关(guan)(guan)(guan)速(su)度的(de)(de)提高（目前采用MOS管的(de)(de)开关(guan)(guan)(guan)电(dian)(dian)源其工(gong)作频率可以(yi)轻易的(de)(de)做到100K/S～150K/S,这对于普通的(de)(de)大功率晶(jing)体三(san)极管来(lai)说是难以(yi)想象(xiang)(xiang)的(de)(de)）。
由于普通(tong)的(de)(de)(de)(de)(de)(de)功率晶(jing)体(ti)(ti)三极(ji)(ji)管(guan)(guan)(guan)(guan)具有当温(wen)(wen)(wen)度(du)(du)上(shang)(shang)升(sheng)(sheng)(sheng)就会(hui)导(dao)(dao)(dao)致集(ji)电(dian)(dian)(dian)(dian)极(ji)(ji)电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)上(shang)(shang)升(sheng)(sheng)(sheng)（正的(de)(de)(de)(de)(de)(de)温(wen)(wen)(wen)度(du)(du)～电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)特性(xing)）的(de)(de)(de)(de)(de)(de)现(xian)象(xiang)，而集(ji)电(dian)(dian)(dian)(dian)极(ji)(ji)电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)的(de)(de)(de)(de)(de)(de)上(shang)(shang)升(sheng)(sheng)(sheng)又(you)会(hui)导(dao)(dao)(dao)致温(wen)(wen)(wen)度(du)(du)进(jin)一(yi)(yi)步(bu)的(de)(de)(de)(de)(de)(de)上(shang)(shang)升(sheng)(sheng)(sheng)，温(wen)(wen)(wen)度(du)(du)进(jin)一(yi)(yi)步(bu)的(de)(de)(de)(de)(de)(de)上(shang)(shang)升(sheng)(sheng)(sheng)，更(geng)进(jin)一(yi)(yi)步(bu)的(de)(de)(de)(de)(de)(de)导(dao)(dao)(dao)致集(ji)电(dian)(dian)(dian)(dian)极(ji)(ji)电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)的(de)(de)(de)(de)(de)(de)上(shang)(shang)升(sheng)(sheng)(sheng)这一(yi)(yi)恶(e)性(xing)循环(huan)。而晶(jing)体(ti)(ti)三极(ji)(ji)管(guan)(guan)(guan)(guan)的(de)(de)(de)(de)(de)(de)耐压(ya)VCEO随(sui)管(guan)(guan)(guan)(guan)温(wen)(wen)(wen)度(du)(du)升(sheng)(sheng)(sheng)高是(shi)逐步(bu)下(xia)降(jiang)(jiang)，这就形成了(le)管(guan)(guan)(guan)(guan)温(wen)(wen)(wen)继(ji)(ji)续上(shang)(shang)升(sheng)(sheng)(sheng)、耐压(ya)继(ji)(ji)续下(xia)降(jiang)(jiang)最终导(dao)(dao)(dao)致晶(jing)体(ti)(ti)三极(ji)(ji)管(guan)(guan)(guan)(guan)的(de)(de)(de)(de)(de)(de)击(ji)穿，这是(shi)一(yi)(yi)种导(dao)(dao)(dao)致电(dian)(dian)(dian)(dian)视(shi)机(ji)开(kai)(kai)关(guan)电(dian)(dian)(dian)(dian)源管(guan)(guan)(guan)(guan)和行(xing)输出管(guan)(guan)(guan)(guan)损坏率占(zhan)95%的(de)(de)(de)(de)(de)(de)破(po)环(huan)性(xing)的(de)(de)(de)(de)(de)(de)热电(dian)(dian)(dian)(dian)击(ji)穿现(xian)象(xiang)，也(ye)称为二(er)次击(ji)穿现(xian)象(xiang)。MOS管(guan)(guan)(guan)(guan)具有和普通(tong)晶(jing)体(ti)(ti)三极(ji)(ji)管(guan)(guan)(guan)(guan)相(xiang)反(fan)的(de)(de)(de)(de)(de)(de)温(wen)(wen)(wen)度(du)(du)～电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)特性(xing)，即当管(guan)(guan)(guan)(guan)温(wen)(wen)(wen)度(du)(du)（或环(huan)境温(wen)(wen)(wen)度(du)(du)）上(shang)(shang)升(sheng)(sheng)(sheng)时(shi)(shi)，沟道电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IDS反(fan)而下(xia)降(jiang)(jiang)。例如；一(yi)(yi)只IDS=10A的(de)(de)(de)(de)(de)(de)MOS FET开(kai)(kai)关(guan)管(guan)(guan)(guan)(guan)，当VGS控(kong)制电(dian)(dian)(dian)(dian)压(ya)不变时(shi)(shi)，在(zai)250C温(wen)(wen)(wen)度(du)(du)下(xia)IDS=3A，当芯片温(wen)(wen)(wen)度(du)(du)升(sheng)(sheng)(sheng)高为1000C时(shi)(shi)，IDS降(jiang)(jiang)低(di)到(dao)2A，这种因温(wen)(wen)(wen)度(du)(du)上(shang)(shang)升(sheng)(sheng)(sheng)而导(dao)(dao)(dao)致沟道电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IDS下(xia)降(jiang)(jiang)的(de)(de)(de)(de)(de)(de)负温(wen)(wen)(wen)度(du)(du)电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)特性(xing)，使之不会(hui)产生恶(e)性(xing)循环(huan)而热击(ji)穿。也(ye)就是(shi)MOS管(guan)(guan)(guan)(guan)没(mei)有二(er)次击(ji)穿现(xian)象(xiang)，可(ke)见采(cai)用MOS管(guan)(guan)(guan)(guan)作(zuo)为开(kai)(kai)关(guan)管(guan)(guan)(guan)(guan)，其开(kai)(kai)关(guan)管(guan)(guan)(guan)(guan)的(de)(de)(de)(de)(de)(de)损坏率大(da)幅(fu)度(du)(du)的(de)(de)(de)(de)(de)(de)降(jiang)(jiang)低(di)，近两年电(dian)(dian)(dian)(dian)视(shi)机(ji)开(kai)(kai)关(guan)电(dian)(dian)(dian)(dian)源采(cai)用MOS管(guan)(guan)(guan)(guan)代替(ti)过去的(de)(de)(de)(de)(de)(de)普通(tong)晶(jing)体(ti)(ti)三极(ji)(ji)管(guan)(guan)(guan)(guan)后，开(kai)(kai)关(guan)管(guan)(guan)(guan)(guan)损坏率大(da)大(da)降(jiang)(jiang)低(di)也(ye)是(shi)一(yi)(yi)个极(ji)(ji)好的(de)(de)(de)(de)(de)(de)证(zheng)明。
普通(tong)(tong)(tong)晶体三极管(guan)在(zai)(zai)(zai)饱(bao)和导(dao)(dao)(dao)(dao)通(tong)(tong)(tong)是(shi)(shi)，几乎是(shi)(shi)直通(tong)(tong)(tong)，有一(yi)(yi)(yi)个(ge)(ge)极低的(de)(de)(de)(de)(de)压(ya)(ya)降，称为饱(bao)和压(ya)(ya)降，既然有一(yi)(yi)(yi)个(ge)(ge)压(ya)(ya)降，那么也就(jiu)(jiu)是(shi)(shi)；普通(tong)(tong)(tong)晶体三极管(guan)在(zai)(zai)(zai)饱(bao)和导(dao)(dao)(dao)(dao)通(tong)(tong)(tong)后(hou)等(deng)效(xiao)是(shi)(shi)一(yi)(yi)(yi)个(ge)(ge)阻值(zhi)极小(xiao)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)阻，但是(shi)(shi)这个(ge)(ge)等(deng)效(xiao)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)阻是(shi)(shi)一(yi)(yi)(yi)个(ge)(ge)非线(xian)性(xing)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)阻（电(dian)(dian)(dian)(dian)(dian)阻上(shang)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)和流(liu)(liu)(liu)过的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)不(bu)能符合欧(ou)姆定(ding)(ding)律(lv)），而(er)MOS管(guan)作为开(kai)关(guan)管(guan)应(ying)(ying)用(yong)，在(zai)(zai)(zai)饱(bao)和导(dao)(dao)(dao)(dao)通(tong)(tong)(tong)后(hou)也存在(zai)(zai)(zai)一(yi)(yi)(yi)个(ge)(ge)阻值(zhi)极小(xiao)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)阻，但是(shi)(shi)这个(ge)(ge)电(dian)(dian)(dian)(dian)(dian)阻等(deng)效(xiao)一(yi)(yi)(yi)个(ge)(ge)线(xian)性(xing)电(dian)(dian)(dian)(dian)(dian)阻，其电(dian)(dian)(dian)(dian)(dian)阻的(de)(de)(de)(de)(de)阻值(zhi)和两端的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)压(ya)(ya)降和流(liu)(liu)(liu)过的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)符合欧(ou)姆定(ding)(ding)律(lv)的(de)(de)(de)(de)(de)关(guan)系，电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)大压(ya)(ya)降就(jiu)(jiu)大，电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)小(xiao)压(ya)(ya)降就(jiu)(jiu)小(xiao)，导(dao)(dao)(dao)(dao)通(tong)(tong)(tong)后(hou)既然等(deng)效(xiao)是(shi)(shi)一(yi)(yi)(yi)个(ge)(ge)线(xian)性(xing)元件，线(xian)性(xing)元件就(jiu)(jiu)可以(yi)并(bing)联(lian)应(ying)(ying)用(yong)，当(dang)这样两个(ge)(ge)电(dian)(dian)(dian)(dian)(dian)阻并(bing)联(lian)在(zai)(zai)(zai)一(yi)(yi)(yi)起，就(jiu)(jiu)有一(yi)(yi)(yi)个(ge)(ge)自动电(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)平(ping)衡(heng)的(de)(de)(de)(de)(de)作用(yong)，所以(yi)MOS管(guan)在(zai)(zai)(zai)一(yi)(yi)(yi)个(ge)(ge)管(guan)子功率不(bu)够的(de)(de)(de)(de)(de)时候(hou)，可以(yi)多管(guan)并(bing)联(lian)应(ying)(ying)用(yong)，且不(bu)必(bi)另外增加平(ping)衡(heng)措施（非线(xian)性(xing)器件是(shi)(shi)不(bu)能直接并(bing)联(lian)应(ying)(ying)用(yong)的(de)(de)(de)(de)(de)）。
MOS管(guan)(guan)(guan)和普通(tong)的晶体(ti)(ti)三(san)极管(guan)(guan)(guan)相比，有以上四项优(you)点(dian)，就(jiu)足以使MOS管(guan)(guan)(guan)在开(kai)关运用状(zhuang)态下完全取代(dai)普通(tong)的晶体(ti)(ti)三(san)极管(guan)(guan)(guan)。目前(qian)的技术MOS管(guan)(guan)(guan)道VDS能做到1000V，只能作为开(kai)关电源的开(kai)关管(guan)(guan)(guan)应用，随着制造(zao)工艺的不(bu)断(duan)进步，VDS的不(bu)断(duan)提高，取代(dai)显像管(guan)(guan)(guan)电视机的行输(shu)出管(guan)(guan)(guan)也(ye)是近期能实现的。
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