应急电(dian)源电(dian)路图(tu),应急电(dian)源mos管(guan)应用-KIA MOS管(guan)
信息来源:本站(zhan) 日期:2025-06-10
应急电(dian)源主要(yao)是由(you)输入(ru)电(dian)磁(ci)干扰滤波器(EMI)、整流滤波电(dian)路(lu)(lu)、功率变换电(dian)路(lu)(lu)、PWM控制器电(dian)路(lu)(lu)、输出(chu)整流滤波电(dian)路(lu)(lu)组成。辅(fu)助电(dian)路(lu)(lu)有输入(ru)过欠(qian)压保(bao)护电(dian)路(lu)(lu)、输出(chu)过欠(qian)压保(bao)护电(dian)路(lu)(lu)、输出(chu)过流保(bao)护电(dian)路(lu)(lu)、输出(chu)短路(lu)(lu)保(bao)护电(dian)路(lu)(lu)等。
应急电源功率变换电路
目前应(ying)(ying)用(yong)最广泛的绝缘栅(zha)场(chang)效(xiao)(xiao)应(ying)(ying)管是MOSFET(MOS管),是利(li)用(yong)半导体(ti)表面的电(dian)声效(xiao)(xiao)应(ying)(ying)进行工作(zuo)的,也(ye)称(cheng)为表面场(chang)效(xiao)(xiao)应(ying)(ying)器件。由于(yu)(yu)它的栅(zha)极(ji)处(chu)于(yu)(yu)不导电(dian)状(zhuang)态(tai),所以输入电(dian)阻可(ke)以大大提高,最高可(ke)达105欧姆,MOS管是利(li)用(yong)栅(zha)源电(dian)压的大小,来改变(bian)半导体(ti)表面感生电(dian)荷的多少(shao),从(cong)而控制漏极(ji)电(dian)流的大小。
工作(zuo)原理:
R4、C3、R5、R6、C4、D1、D2组(zu)成(cheng)缓冲器,和(he)(he)开(kai)(kai)关MOS管(guan)并接,使开(kai)(kai)关管(guan)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)应力减少,EMI减少,不发生二次击(ji)穿。在开(kai)(kai)关管(guan)Q1关断时,变压(ya)器的(de)(de)原边线圈(quan)易产生尖峰(feng)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)和(he)(he)尖峰(feng)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)流,这些元件组(zu)合(he)一起,能很好地(di)吸收尖峰(feng)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)和(he)(he)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)流。从(cong)R3测得的(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)流峰(feng)值(zhi)信号参与当前(qian)工(gong)(gong)(gong)作周波的(de)(de)占空比控制(zhi),因此是当前(qian)工(gong)(gong)(gong)作周波的(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)流限制(zhi)。当R5上(shang)的(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)达到(dao)1V时,UC3842停止工(gong)(gong)(gong)作,开(kai)(kai)关管(guan)Q1立即(ji)关断。R1和(he)(he)Q1中的(de)(de)结电(dian)(dian)(dian)(dian)(dian)(dian)(dian)容CGS、CGD一起组(zu)成(cheng)RC网络,电(dian)(dian)(dian)(dian)(dian)(dian)(dian)容的(de)(de)充放电(dian)(dian)(dian)(dian)(dian)(dian)(dian)直接影响着开(kai)(kai)关管(guan)的(de)(de)开(kai)(kai)关速度(du)。R1过(guo)小,易引起振(zhen)荡,电(dian)(dian)(dian)(dian)(dian)(dian)(dian)磁干扰(rao)也会(hui)很大(da);R1过(guo)大(da),会(hui)降低开(kai)(kai)关管(guan)的(de)(de)开(kai)(kai)关速度(du)。Z1通(tong)常(chang)将MOS管(guan)的(de)(de)GS电(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)限制(zhi)在18V以下,从(cong)而保护了MOS管(guan)。
Q1的(de)(de)(de)栅(zha)极受控电(dian)压为(wei)锯(ju)形(xing)(xing)波,当(dang)(dang)其占空比越大(da)时(shi),Q1导通时(shi)间越长(zhang),变(bian)(bian)(bian)压器(qi)所储(chu)存(cun)的(de)(de)(de)能(neng)量也(ye)就越多;当(dang)(dang)Q1截止时(shi),变(bian)(bian)(bian)压器(qi)通过D1、D2、R5、R4、C3释放能(neng)量,同时(shi)也(ye)达到了磁场复位的(de)(de)(de)目的(de)(de)(de),为(wei)变(bian)(bian)(bian)压器(qi)的(de)(de)(de)下一次存(cun)储(chu)、传(chuan)递能(neng)量做好了准备(bei)。IC根(gen)据输出电(dian)压和(he)(he)电(dian)流时(shi)刻调整着⑥脚锯(ju)形(xing)(xing)波占空比的(de)(de)(de)大(da)小,从而稳定了整机的(de)(de)(de)输出电(dian)流和(he)(he)电(dian)压。C4和(he)(he)R6为(wei)尖峰电(dian)压吸收回(hui)路。
推挽式功率(lv)变换电路(lu):
Q1和Q2将(jiang)轮流导通。
有驱动变压(ya)器的(de)功率(lv)变换电(dian)路:
T2为(wei)驱动变(bian)(bian)压(ya)器,T1为(wei)开关变(bian)(bian)压(ya)器,TR1为(wei)电流环。
MOS管在应急电(dian)源(yuan)中扮(ban)演(yan)着至关(guan)重要(yao)的角色,主(zhu)要(yao)作(zuo)用包括(kuo):
高频(pin)开(kai)关功(gong)能:在(zai)应(ying)急(ji)电源中,MOS管作为(wei)高频(pin)开(kai)关元件,通(tong)(tong)过控制(zhi)栅极电压来改变漏源极之间的导通(tong)(tong)状(zhuang)态(tai),实现电流的快(kuai)速(su)接通(tong)(tong)和(he)断开(kai)。这种快(kuai)速(su)开(kai)关特性使得电源能够在(zai)高频(pin)下进行能量转(zhuan)换,从(cong)而减小体积、提高功(gong)率密度(du)和(he)工作效率。
高效能(neng)量转换:MOS管的开关(guan)速(su)度快(纳秒(miao)级),支(zhi)持(chi)高频工作(几十kHz至MHz),减(jian)少开关(guan)损耗,提升电源整体效率。其低(di)导(dao)通电阻(RDS(on))特(te)性使导(dao)通时(shi)压(ya)降(jiang)小,减(jian)少发热,适合大电流应用。
精(jing)确稳压与保(bao)护(hu)(hu):在应急电(dian)源中,MOS管(guan)(guan)(guan)配(pei)合PWM控制器(qi)等芯片,能够实现精(jing)准的电(dian)压调(diao)节(jie)和过流保(bao)护(hu)(hu)。通(tong)过反(fan)馈机制,MOS管(guan)(guan)(guan)按需调(diao)整开(kai)关频率和占空比(bi),以(yi)维持输出电(dian)压稳定。当检测到过载或短路(lu)时,MOS管(guan)(guan)(guan)可以(yi)通(tong)过快速关断来避免电(dian)源系统(tong)遭受(shou)损害。
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