MOS管种类

MOSFET管是(shi)FET的(de)(de)一种(zhong)(zhong)（另(ling)一种(zhong)(zhong)是(shi)JFET），可以被(bei)制(zhi)构成增强型(xing)(xing)或(huo)耗尽型(xing)(xing)，P沟(gou)道(dao)(dao)或(huo)N沟(gou)道(dao)(dao)共4种(zhong)(zhong)类型(xing)(xing)，但理论应用的(de)(de)只需增强型(xing)(xing)的(de)(de)N沟(gou)道(dao)(dao)MOS管和增强型(xing)(xing)的(de)(de)P沟(gou)道(dao)(dao)MOS管，所以通常提到NMOS，或(huo)者(zhe)PMOS指的(de)(de)就是(shi)这两种(zhong)(zhong)。

场(chang)效(xiao)(xiao)应(ying)管(guan)分为结(jie)型场(chang)效(xiao)(xiao)应(ying)管(guan)（JFET）和绝缘栅场(chang)效(xiao)(xiao)应(ying)管(guan)（MOS管(guan)）两大类。

结型场效应管（JFET）

结(jie)型场效(xiao)(xiao)应(ying)管(guan)的(de)分类：结(jie)型场效(xiao)(xiao)应(ying)管(guan)有两种结(jie)构形(xing)式，它们是N沟道结(jie)型场效(xiao)(xiao)应(ying)管(guan)和P沟道结(jie)型场效(xiao)(xiao)应(ying)管(guan)。

结(jie)(jie)型(xing)场效(xiao)(xiao)应(ying)管也具有三个电(dian)(dian)(dian)(dian)极，它(ta)们是(shi)：栅极；漏(lou)极；源(yuan)极。电(dian)(dian)(dian)(dian)路符号中栅极的(de)箭头方向可理解(jie)为两个PN结(jie)(jie)的(de)正向导(dao)电(dian)(dian)(dian)(dian)方向。2、结(jie)(jie)型(xing)场效(xiao)(xiao)应(ying)管的(de)工作原(yuan)理(以N沟道(dao)结(jie)(jie)型(xing)场效(xiao)(xiao)应(ying)管为例)，N沟道(dao)结(jie)(jie)构型(xing)场效(xiao)(xiao)应(ying)管的(de)结(jie)(jie)构及符号，由于PN结(jie)(jie)中的(de)载流(liu)子已经耗尽(jin)(jin)，故PN基本(ben)上是(shi)不导(dao)电(dian)(dian)(dian)(dian)的(de)，形(xing)成了所(suo)(suo)谓耗尽(jin)(jin)区(qu)，当(dang)漏(lou)极电(dian)(dian)(dian)(dian)源(yuan)电(dian)(dian)(dian)(dian)压(ya)ED一定(ding)时，如果栅极电(dian)(dian)(dian)(dian)压(ya)越(yue)负，PN结(jie)(jie)交界面所(suo)(suo)形(xing)成的(de)耗尽(jin)(jin)区(qu)就(jiu)越(yue)厚，则漏(lou)、源(yuan)极之间导(dao)电(dian)(dian)(dian)(dian)的(de)沟道(dao)越(yue)窄，漏(lou)极电(dian)(dian)(dian)(dian)流(liu)ID就(jiu)愈小；反之，如果栅极电(dian)(dian)(dian)(dian)压(ya)没有那么负，则沟道(dao)变宽，ID变大，所(suo)(suo)以用栅极电(dian)(dian)(dian)(dian)压(ya)EG可以控制(zhi)(zhi)漏(lou)极电(dian)(dian)(dian)(dian)流(liu)ID的(de)变化，就(jiu)是(shi)说，场效(xiao)(xiao)应(ying)管是(shi)电(dian)(dian)(dian)(dian)压(ya)控制(zhi)(zhi)元件。

绝缘栅场效应管

1、绝缘栅场效应(ying)管(guan)（MOS管(guan)）的分类：绝缘栅场效应(ying)管(guan)也(ye)有(you)两种(zhong)结构(gou)形式，它(ta)们是(shi)N沟道(dao)型(xing)和P沟道(dao)型(xing)。无论是(shi)什么沟道(dao)，它(ta)们又分为(wei)增强型(xing)和耗(hao)尽型(xing)两种(zhong)。

2、它是由金属、氧化(hua)(hua)物(wu)和半导体所组成(cheng)，所以又称为金属—氧化(hua)(hua)物(wu)—半导体场效应管，简称MOS场效应管。

3、绝缘(yuan)栅(zha)(zha)型场效(xiao)应(ying)(ying)管的(de)(de)(de)(de)(de)工作原理(以(yi)N沟(gou)(gou)道(dao)增强型MOS场效(xiao)应(ying)(ying)管)它是(shi)利用UGS来控制(zhi)(zhi)“感(gan)(gan)应(ying)(ying)电(dian)(dian)(dian)(dian)荷(he)(he)”的(de)(de)(de)(de)(de)多(duo)少，以(yi)改(gai)变(bian)由(you)这些“感(gan)(gan)应(ying)(ying)电(dian)(dian)(dian)(dian)荷(he)(he)”形(xing)(xing)成的(de)(de)(de)(de)(de)导电(dian)(dian)(dian)(dian)沟(gou)(gou)道(dao)的(de)(de)(de)(de)(de)状(zhuang)况，然后(hou)达到控制(zhi)(zhi)漏极(ji)电(dian)(dian)(dian)(dian)流的(de)(de)(de)(de)(de)目(mu)的(de)(de)(de)(de)(de)。在(zai)制(zhi)(zhi)造(zao)管子(zi)时(shi)，通过(guo)工艺使绝缘(yuan)层中出现大量(liang)(liang)正(zheng)离子(zi)，故在(zai)交(jiao)界面(mian)的(de)(de)(de)(de)(de)另一侧能(neng)感(gan)(gan)应(ying)(ying)出较多(duo)的(de)(de)(de)(de)(de)负电(dian)(dian)(dian)(dian)荷(he)(he)，这些负电(dian)(dian)(dian)(dian)荷(he)(he)把高渗杂质的(de)(de)(de)(de)(de)N区接通，形(xing)(xing)成了导电(dian)(dian)(dian)(dian)沟(gou)(gou)道(dao)，即使在(zai)VGS=0时(shi)也有较大的(de)(de)(de)(de)(de)漏极(ji)电(dian)(dian)(dian)(dian)流ID。当栅(zha)(zha)极(ji)电(dian)(dian)(dian)(dian)压改(gai)变(bian)时(shi)，沟(gou)(gou)道(dao)内被感(gan)(gan)应(ying)(ying)的(de)(de)(de)(de)(de)电(dian)(dian)(dian)(dian)荷(he)(he)量(liang)(liang)也改(gai)变(bian)，导电(dian)(dian)(dian)(dian)沟(gou)(gou)道(dao)的(de)(de)(de)(de)(de)宽窄也随之而(er)变(bian)，因(yin)而(er)漏极(ji)电(dian)(dian)(dian)(dian)流ID随着栅(zha)(zha)极(ji)电(dian)(dian)(dian)(dian)压的(de)(de)(de)(de)(de)变(bian)化(hua)而(er)变(bian)化(hua)。

场效应(ying)管(guan)的工(gong)作方(fang)式有两种：当栅(zha)压为零(ling)时有较大漏(lou)极电(dian)流的称为耗散型(xing)；当栅(zha)压为零(ling)，漏(lou)极电(dian)流也为零(ling)，必须再加(jia)一(yi)定的栅(zha)压之后才有漏(lou)极电(dian)流的称为增(zeng)强型(xing)。

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