碳化硅,碳化硅管(guan)性能特点和主要用(yong)途是什么(me)?详解(jie)
信息(xi)来源：本站 日期：2017-10-13
碳化(hua)硅管具有(you)强(qiang)度高、硬(ying)度高、耐磨性(xing)好、耐高温、耐腐蚀(shi)、抗热抗震(zhen)性(xing)好、导热系(xi)数(shu)大以及抗氧化(hua)性(xing)好等(deng)优胜功能，首要用(yong)于(yu)中频(pin)铸造、各种(zhong)热处理电炉(lu)、冶金、化(hua)工(gong)、有(you)色金属锻(duan)炼等(deng)职业(ye)，碳化(hua)硅保护管广泛(fan)用(yong)于(yu)冶金烧结炉(lu)和中 频(pin)加(jia)热铸造炉(lu)，长(zhang)度可根据现场实际需要定做。
碳(tan)化(hua)硅(gui)(gui)管(guan)是以碳(tan)化(hua)硅(gui)(gui)为首要原料，经高(gao)温(wen)烧(shao)成(cheng)的一种(zhong)优(you)良(liang)碳(tan)化(hua)硅(gui)(gui)成(cheng)品，它具(ju)有(you)耐(nai)高(gao)温(wen)、耐(nai)腐蚀、导热(re)(re)快、强(qiang)度(du)高(gao)、硬度(du)高(gao)、耐(nai)磨(mo)性(xing)好(hao)、抗(kang)热(re)(re)抗(kang)震性(xing)好(hao)、导热(re)(re)系数大以及抗(kang)氧(yang)化(hua)性(xing)好(hao)等优(you)胜功(gong)能，两头再配以专用的耐(nai)高(gao)温(wen)绝缘套(tao)，可有(you)效的避(bi)免金(jin)属溶液对电热(re)(re)元件(jian)(包含(han)硅(gui)(gui)碳(tan)棒(bang)、电炉(lu)丝(si)等)的腐蚀，各(ge)项指标均优(you)于(yu)各(ge)种(zhong)石墨成(cheng)品首要应用于(yu)有(you)色(se)金(jin)属锻(duan)炼，中频铸造、各(ge)种(zhong)热(re)(re)处(chu)理电炉(lu)、冶金(jin)、化(hua)工(gong)等多种(zhong)职业。碳(tan)化(hua)硅(gui)(gui)保护(hu)管(guan)导热(re)(re)性(xing)、抗(kang)氧(yang)化(hua)性(xing)、抗(kang)热(re)(re)冲击功(gong)能、高(gao)温(wen)耐(nai)磨(mo)功(gong)能优(you)胜，并有(you)良(liang)好(hao)的化(hua)学(xue)稳定性(xing)，抗(kang)酸才能极强(qiang)，与(yu)强(qiang)酸强(qiang)碱不反响(xiang)。
该成(cheng)品以碳(tan)化(hua)硅(gui)为(wei)首(shou)要原料，经(jing)特(te)别技(ji)术高温(wen)烧成(cheng)的一种优良碳(tan)化(hua)硅(gui)成(cheng)品，长度标(biao)准(zhun)可根(gen)据客户实际需要定做。
广泛应用于有色金属锻(duan)(duan)炼、铝成品(pin)除气体(ti)系、印染机械(xie)、锌铝锻(duan)(duan)炼及成品(pin)加工等(deng)职(zhi)业。
碳(tan)化硅JFET有着高(gao)(gao)输(shu)入(ru)阻抗(kang)、低(di)噪声(sheng)和(he)线性(xing)度好等特(te)点，是(shi)目前发展较(jiao)快的(de)(de)(de)碳(tan)化硅器件(jian)(jian)之一(yi)，并(bing)(bing)且率先实现(xian)了(le)商业(ye)化。与(yu)MOSFET器件(jian)(jian)相比，JFET器件(jian)(jian)不(bu)存(cun)在(zai)栅氧(yang)层(ceng)缺陷造成的(de)(de)(de)可靠性(xing)问题(ti)和(he)载流(liu)子(zi)迁(qian)移率过(guo)低(di)的(de)(de)(de)限制(zhi)，同时单(dan)极性(xing)工(gong)(gong)(gong)作(zuo)(zuo)(zuo)特(te)性(xing)使其(qi)保持(chi)了(le)良好的(de)(de)(de)高(gao)(gao)频工(gong)(gong)(gong)作(zuo)(zuo)(zuo)能力(li)(li)。另外，JFET器件(jian)(jian)具有更佳的(de)(de)(de)高(gao)(gao)温工(gong)(gong)(gong)作(zuo)(zuo)(zuo)稳定性(xing)和(he)可靠性(xing)。碳(tan)化硅JFET器件(jian)(jian)的(de)(de)(de)门极的(de)(de)(de)结型(xing)结构使得通(tong)(tong)常(chang)JFET的(de)(de)(de)阈值电(dian)(dian)压(ya)大多为负，即常(chang)通(tong)(tong)型(xing)器件(jian)(jian)，这对于电(dian)(dian)力(li)(li)电(dian)(dian)子(zi)的(de)(de)(de)应用极为不(bu)利，无法与(yu)目前通(tong)(tong)用的(de)(de)(de)驱动(dong)电(dian)(dian)路兼(jian)容(rong)。美(mei)国Semisouth公司和(he)Rutgers大学通(tong)(tong)过(guo)引入(ru)沟(gou)槽(cao)注入(ru)式或者(zhe)台面(mian)沟(gou)槽(cao)结构(TIVJFET)的(de)(de)(de)器件(jian)(jian)工(gong)(gong)(gong)艺，开发出(chu)常(chang)断(duan)工(gong)(gong)(gong)作(zuo)(zuo)(zuo)状态的(de)(de)(de)增强(qiang)型(xing)器件(jian)(jian)。但是(shi)增强(qiang)型(xing)器件(jian)(jian)往往是(shi)在(zai)牺牲一(yi)定的(de)(de)(de)正向导通(tong)(tong)电(dian)(dian)阻特(te)性(xing)的(de)(de)(de)情况下(xia)形成的(de)(de)(de)，因此常(chang)通(tong)(tong)型(xing)(耗尽型(xing))JFET更容(rong)易实现(xian)更高(gao)(gao)功率密度和(he)电(dian)(dian)流(liu)能力(li)(li)，而耗尽型(xing)JFET器件(jian)(jian)可以通(tong)(tong)过(guo)级联(lian)(lian)的(de)(de)(de)方法实现(xian)常(chang)断(duan)型(xing)工(gong)(gong)(gong)作(zuo)(zuo)(zuo)状态。级联(lian)(lian)的(de)(de)(de)方法是(shi)通(tong)(tong)过(guo)串联(lian)(lian)一(yi)个低(di)压(ya)的(de)(de)(de)Si基MOSFET来(lai)实现(xian)。级联(lian)(lian)后(hou)的(de)(de)(de)JFET器件(jian)(jian)的(de)(de)(de)驱动(dong)电(dian)(dian)路与(yu)通(tong)(tong)用的(de)(de)(de)硅基器件(jian)(jian)驱动(dong)电(dian)(dian)路自然(ran)兼(jian)容(rong)。级联(lian)(lian)的(de)(de)(de)结构非常(chang)适用于在(zai)高(gao)(gao)压(ya)高(gao)(gao)功率场合(he)替代(dai)原有的(de)(de)(de)硅IGBT器件(jian)(jian)，并(bing)(bing)且直接回避了(le)驱动(dong)电(dian)(dian)路的(de)(de)(de)兼(jian)容(rong)问题(ti)。
碳(tan)化硅(gui)(gui)MOSFE一直(zhi)是(shi)最(zui)受瞩目(mu)的(de)碳(tan)化硅(gui)(gui)开关管(guan)，它不仅具有(you)(you)理想的(de)栅(zha)极绝缘特(te)性(xing)、高速的(de)开关性(xing)能、低(di)导通电阻和高稳(wen)定性(xing)，而且其驱动(dong)(dong)电路非常(chang)简单,并与现有(you)(you)的(de)电力电子器(qi)件(硅(gui)(gui)功率MOSFET和IGBT)驱动(dong)(dong)电路的(de)兼容性(xing)是(shi)碳(tan)化硅(gui)(gui)器(qi)件中最(zui)好的(de)。
SiCMOSFET器件(jian)长期(qi)面(mian)临的(de)(de)两个主要挑战是(shi)(shi)栅(zha)氧(yang)(yang)层的(de)(de)长期(qi)可靠(kao)性(xing)(xing)问题和(he)沟(gou)(gou)道电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)问题。其(qi)中沟(gou)(gou)道电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)大(da)导(dao)致(zhi)导(dao)通时的(de)(de)损(sun)耗大(da)，为(wei)(wei)减(jian)(jian)少导(dao)通损(sun)耗而降低(di)(di)导(dao)通电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)和(he)提(ti)(ti)高(gao)(gao)(gao)栅(zha)氧(yang)(yang)层的(de)(de)可靠(kao)性(xing)(xing)的(de)(de)研(yan)发一直在进行。降低(di)(di)导(dao)通电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)的(de)(de)方法之一是(shi)(shi)提(ti)(ti)高(gao)(gao)(gao)反型沟(gou)(gou)道的(de)(de)载(zai)流(liu)子(zi)迁移(yi)率，减(jian)(jian)小(xiao)沟(gou)(gou)道电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)。为(wei)(wei)了提(ti)(ti)高(gao)(gao)(gao)碳化(hua)硅(gui)MOSFET栅(zha)氧(yang)(yang)层的(de)(de)质量(liang)，降低(di)(di)表面(mian)缺陷(xian)浓度(du)，提(ti)(ti)高(gao)(gao)(gao)载(zai)流(liu)子(zi)数(shu)量(liang)和(he)迁移(yi)率，一种最通用的(de)(de)办(ban)法是(shi)(shi)实现(xian)(xian)生长界(jie)(jie)面(mian)的(de)(de)氮注入，也被称为(wei)(wei)界(jie)(jie)面(mian)钝化(hua)，即在栅(zha)氧(yang)(yang)层生长过程结束后，在富氮的(de)(de)环境(jing)中进行高(gao)(gao)(gao)温退(tui)火，这(zhei)样可以(yi)实现(xian)(xian)沟(gou)(gou)道载(zai)流(liu)子(zi)迁移(yi)率的(de)(de)提(ti)(ti)高(gao)(gao)(gao)，从而减(jian)(jian)小(xiao)沟(gou)(gou)道电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)，减(jian)(jian)小(xiao)导(dao)通损(sun)耗。降低(di)(di)导(dao)通电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)的(de)(de)方法之二是(shi)(shi)采用在栅(zha)极(ji)正下方开掘沟(gou)(gou)槽(cao)的(de)(de)沟(gou)(gou)槽(cao)型栅(zha)极(ji)结构。目前已经投产的(de)(de)SiCMOSFET都(dou)是(shi)(shi)“平面(mian)型”。平面(mian)型在为(wei)(wei)了降低(di)(di)沟(gou)(gou)道电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)而对单元进行微细(xi)化(hua)时，容易(yi)导(dao)致(zhi)JFET电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)增大(da)的(de)(de)问题，导(dao)通电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)的(de)(de)降低(di)(di)方面(mian)存在一定的(de)(de)局(ju)限性(xing)(xing)。而沟(gou)(gou)槽(cao)型在构造上不存在JFET电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)。因(yin)此，适于降低(di)(di)沟(gou)(gou)道电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)、减(jian)(jian)小(xiao)导(dao)通电(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)(zu)。
1．导热功能好，管(guan)壁(bi)薄（只有几个(ge)毫米），因而商品对温度改变反响十分活(huo)络；
2．彻(che)底不受腐蚀影响(xiang)；
3．高(gao)温下不会(hui)熔化，对金属(shu)液没有污(wu)染；
4．能够用来熔化富(fu)含钠和锶成分(fen)的合金(jin)；
5．商品的外表不会(hui)粘附炉渣，十分(fen)简单保护(hu)；
6. 耐高温（最高可(ke)达1600℃）；
7．抗热冲(chong)击功能(neng)好(hao)；
8．商(shang)品(pin)硬(ying)度高，难以折断；
9．性价比高。（使用寿命在(zai)半年(nian)以(yi)上(shang)）。
碳(tan)化(hua)(hua)硅电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子器(qi)件(jian)在(zai)(zai)提(ti)高电(dian)(dian)(dian)能(neng)(neng)利(li)用(yong)效率(lv)和(he)(he)实现(xian)(xian)电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子装置的(de)(de)(de)(de)小型(xing)化(hua)(hua)方面(mian)将(jiang)发(fa)挥越来越大的(de)(de)(de)(de)优势。碳(tan)化(hua)(hua)硅电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子器(qi)件(jian)能(neng)(neng)提(ti)高电(dian)(dian)(dian)能(neng)(neng)利(li)用(yong)的(de)(de)(de)(de)效率(lv)，来实现(xian)(xian)电(dian)(dian)(dian)能(neng)(neng)损(sun)失的(de)(de)(de)(de)减少，因为相对于硅器(qi)件(jian)，碳(tan)化(hua)(hua)硅器(qi)件(jian)在(zai)(zai)降(jiang)低(di)导通电(dian)(dian)(dian)阻(zu)和(he)(he)减小开(kai)(kai)关(guan)损(sun)耗(hao)等方面(mian)具有优势。比如，由二(er)极管和(he)(he)开(kai)(kai)关(guan)管组成(cheng)的(de)(de)(de)(de)逆(ni)(ni)变电(dian)(dian)(dian)路(lu)中，仅将(jiang)二(er)极管材料(liao)由硅换(huan)成(cheng)碳(tan)化(hua)(hua)硅，逆(ni)(ni)变器(qi)的(de)(de)(de)(de)电(dian)(dian)(dian)能(neng)(neng)损(sun)失就(jiu)可以降(jiang)低(di)15～30%左(zuo)右，如果(guo)开(kai)(kai)关(guan)管材料(liao)也换(huan)成(cheng)SiC，则(ze)电(dian)(dian)(dian)能(neng)(neng)损(sun)失可降(jiang)低(di)一半以上。利(li)用(yong)碳(tan)化(hua)(hua)硅制作的(de)(de)(de)(de)电(dian)(dian)(dian)力(li)电(dian)(dian)(dian)子器(qi)件(jian)具备三个能(neng)(neng)使电(dian)(dian)(dian)力(li)转换(huan)器(qi)实现(xian)(xian)小型(xing)化(hua)(hua)的(de)(de)(de)(de)特性(xing)：更(geng)高的(de)(de)(de)(de)开(kai)(kai)关(guan)速度、更(geng)低(di)的(de)(de)(de)(de)损(sun)耗(hao)和(he)(he)更(geng)高的(de)(de)(de)(de)工作温(wen)度。碳(tan)化(hua)(hua)硅器(qi)件(jian)能(neng)(neng)以硅器(qi)件(jian)数倍的(de)(de)(de)(de)速度进行开(kai)(kai)关(guan)。开(kai)(kai)关(guan)频率(lv)越高，电(dian)(dian)(dian)感(gan)和(he)(he)电(dian)(dian)(dian)容(rong)等储能(neng)(neng)和(he)(he)滤(lv)波部件(jian)就(jiu)越容(rong)易(yi)实现(xian)(xian)小型(xing)化(hua)(hua);电(dian)(dian)(dian)能(neng)(neng)损(sun)失降(jiang)低(di)，发(fa)热量(liang)就(jiu)会(hui)相应(ying)减少，因此可实现(xian)(xian)电(dian)(dian)(dian)力(li)转换(huan)器(qi)的(de)(de)(de)(de)小型(xing)化(hua)(hua);而(er)在(zai)(zai)结温(wen)方面(mian)，硅器(qi)件(jian)在(zai)(zai)200°C就(jiu)达到了(le)极限，而(er)碳(tan)化(hua)(hua)硅器(qi)件(jian)能(neng)(neng)在(zai)(zai)更(geng)高结温(wen)和(he)(he)环境温(wen)度的(de)(de)(de)(de)情况下工作，这样(yang)就(jiu)可以缩(suo)小或者省去电(dian)(dian)(dian)力(li)转换(huan)器(qi)的(de)(de)(de)(de)冷却机构。
随着碳化(hua)硅(gui)电(dian)力电(dian)子(zi)器(qi)件(jian)(jian)的(de)技术进步(bu)(bu)，目前(qian)碳化(hua)硅(gui)器(qi)件(jian)(jian)相对于硅(gui)器(qi)件(jian)(jian)，不仅有性能(neng)的(de)巨大优(you)(you)势(shi)，在(zai)系(xi)统成本(ben)上的(de)优(you)(you)势(shi)也逐渐(jian)显现(xian)。碳化(hua)硅(gui)器(qi)件(jian)(jian)将逐步(bu)(bu)地展现(xian)出其性能(neng)和降低系(xi)统成本(ben)方面的(de)优(you)(you)势(shi)。
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