cmos接(jie)口电(dian)路(lu)-CMOS与放大器的接(jie)口电(dian)路(lu)分析-KIA MOS管?
信(xin)息(xi)来源：本站(zhan) 日期：2017-07-11
图7-6(a)、(b)中三极管(guan)的(de)(de)集电(dian)(dian)(dian)极负载(zai)为继电(dian)(dian)(dian)器KA线圈。其工作电(dian)(dian)(dian)流(liu)为lOOmA。若晶(jing)体管(guan)的(de)(de)β=25，则需(xu)求(qiu)4mA的(de)(de)基(ji)(ji)极电(dian)(dian)(dian)流(liu)。这对与非门(men)来说是个拉(la)电(dian)(dian)(dian)流(liu)负载(zai)。如与非门(men)不能提供这样大(da)的(de)(de)拉(la)电(dian)(dian)(dian)流(liu)，可采用图7-6(b)所示(shi)的(de)(de)电(dian)(dian)(dian)路(lu)(lu)。由电(dian)(dian)(dian)阻Ri、二极管(guan)VD1和(he)稳压管(guan)Vs组成变换电(dian)(dian)(dian)路(lu)(lu)。当与非门(men)输(shu)出(chu)高电(dian)(dian)(dian)平常，VD1截止(zhi)。VS击穿，晶(jing)体管(guan)VT的(de)(de)基(ji)(ji)极电(dian)(dian)(dian)流(liu)由+15V电(dian)(dian)(dian)源(yuan)经(jing)R1、VS和(he)V1的(de)(de)发射结(jie)来提供，VT导通，继电(dian)(dian)(dian)器KA吸(xi)合。当与非门(men)输(shu)出(chu)低电(dian)(dian)(dian)1平常，灌电(dian)(dian)(dian)流(liu)经(jing)+15V电(dian)(dian)(dian)源(yuan)经(jing)R1、VDi流(liu)入与非门(men)，这个电(dian)(dian)(dian)流(liu)只要(yao)几毫(hao)安，这样可防止(zhi)冈拉(la)电(dian)(dian)(dian)流(liu)过(guo)大(da)而惹(re)起输(shu)出(chu)高电(dian)(dian)(dian)平的(de)(de)降(jiang)落。这时VS截止(zhi)，VT截止(zhi)，KA释放(fang)。
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