利盈娱乐(中国)创新平台有限公司

p沟道mos管

P沟(gou)道(dao)(dao)MOS管工(gong)作原理金属氧(yang)化物半导(dao)体(ti)场效应(MOS)晶(jing)体(ti)管可分(fen)为(wei)N沟(gou)道(dao)(dao)与P沟(gou)道(dao)(dao)两(liang)(liang)大类，P沟(gou)道(dao)(dao)硅(gui)MOS场效应晶(jing)体(ti)管在N型(xing)(xing)硅(gui)衬底上有两(liang)(liang)个P+区，分(fen)别叫做源(yuan)极(ji)和漏(lou)(lou)极(ji)，两(liang)(liang)极(ji)之间不通导(dao)，柵(zha)极(ji)上加有足(zu)够的正(zheng)电(dian)压(源(yuan)极(ji)接(jie)地)时，柵(zha)极(ji)下的N型(xing)(xing)硅(gui)表面呈现P型(xing)(xing)反型(xing)(xing)层，成为(wei)衔接(jie)源(yuan)极(ji)和漏(lou)(lou)极(ji)的沟(gou)道(dao)(dao)。

P沟(gou)道(dao)(dao)(dao)MOS晶体(ti)管(guan)(guan)的(de)(de)空穴迁移率低,因而在MOS晶体(ti)管(guan)(guan)的(de)(de)几何尺寸(cun)和工(gong)作(zuo)电(dian)(dian)压(ya)绝对(dui)(dui)值(zhi)相等的(de)(de)情况下，PMOS晶体(ti)管(guan)(guan)的(de)(de)跨导(dao)小于N沟(gou)道(dao)(dao)(dao)MOS晶体(ti)管(guan)(guan)。此外，P沟(gou)道(dao)(dao)(dao)MOS晶体(ti)管(guan)(guan)阈值(zhi)电(dian)(dian)压(ya)的(de)(de)绝对(dui)(dui)值(zhi)普通偏高(gao)，央(yang)求有(you)较高(gao)的(de)(de)工(gong)作(zuo)电(dian)(dian)压(ya)。它(ta)的(de)(de)供电(dian)(dian)电(dian)(dian)源的(de)(de)电(dian)(dian)压(ya)大小和极性(xing),与双极型晶体(ti)管(guan)(guan)——晶体(ti)管(guan)(guan)逻辑电(dian)(dian)路(lu)(lu)不兼容。PMOS因逻辑摆幅大，充电(dian)(dian)放电(dian)(dian)过程长，加之器件跨导(dao)小，所(suo)(suo)以工(gong)作(zuo)速度更低，在NMOS电(dian)(dian)路(lu)(lu)(见N沟(gou)道(dao)(dao)(dao)金属—氧(yang)化物—半导(dao)体(ti)集成(cheng)电(dian)(dian)路(lu)(lu))呈现之后，多数已为NMOS电(dian)(dian)路(lu)(lu)所(suo)(suo)取代。只是,因PMOS电(dian)(dian)路(lu)(lu)工(gong)艺简(jian)单,价钱(qian)低价，有(you)些中范围和小范围数字控制电(dian)(dian)路(lu)(lu)仍采用PMOS电(dian)(dian)路(lu)(lu)技术。

改动栅压可以改动沟(gou)(gou)道(dao)(dao)中(zhong)的(de)电(dian)(dian)子密(mi)度，从而改动沟(gou)(gou)道(dao)(dao)的(de)电(dian)(dian)阻(zu)。这(zhei)种(zhong)MOS场效应晶(jing)(jing)体(ti)(ti)管称为(wei)P沟(gou)(gou)道(dao)(dao)增强型场效应晶(jing)(jing)体(ti)(ti)管。假定N型硅衬底表(biao)面不(bu)加(jia)栅压就已存在P型反型层沟(gou)(gou)道(dao)(dao)，加(jia)上恰当的(de)偏压，可使沟(gou)(gou)道(dao)(dao)的(de)电(dian)(dian)阻(zu)增大或(huo)减小。这(zhei)样的(de)MOS场效应晶(jing)(jing)体(ti)(ti)管称为(wei)P沟(gou)(gou)道(dao)(dao)耗尽型场效应晶(jing)(jing)体(ti)(ti)管。统称为(wei)PMOS晶(jing)(jing)体(ti)(ti)管。

p沟道mos管工作原理

正常工作(zuo)时(shi)，P沟(gou)道增(zeng)强型MOS管的衬底(di)必需与(yu)源(yuan)极相连(lian)，而漏心(xin)极的电(dian)压Vds应为(wei)负值，以(yi)保(bao)证两(liang)个(ge)P区与(yu)衬底(di)之间(jian)的PN结均为(wei)反偏，同(tong)时(shi)为(wei)了在衬底(di)顶表(biao)面左近构成(cheng)导电(dian)沟(gou)道，栅极对源(yuan)极的电(dian)压Vgs也应为(wei)负。

1．Ｖds≠Ｏ的情况导电(dian)(dian)沟道(dao)构成以后，ＤＳ间加(jia)(jia)负向电(dian)(dian)压时，那么在源极(ji)(ji)(ji)与漏(lou)极(ji)(ji)(ji)之间将有漏(lou)极(ji)(ji)(ji)电(dian)(dian)流(liu)Ｉd流(liu)通，而(er)且Ｉd随Vds而(er)增(zeng)加(jia)(jia)．Ｉd沿沟道(dao)产生(sheng)的压降使沟道(dao)上各点与栅极(ji)(ji)(ji)间的电(dian)(dian)压不再(zai)相等，该电(dian)(dian)压削弱了栅极(ji)(ji)(ji)中负电(dian)(dian)荷电(dian)(dian)场的作(zuo)用，使沟道(dao)从漏(lou)极(ji)(ji)(ji)到(dao)源极(ji)(ji)(ji)逐渐变窄．当(dang)Ｖds增(zeng)大到(dao)使Ｖgd＝Ｖgs（TH），沟道(dao)在漏(lou)极(ji)(ji)(ji)左近(jin)呈现预(yu)夹断．

2．导(dao)电(dian)沟(gou)道的(de)(de)(de)构(gou)(gou)成(cheng)(cheng)（Ｖds＝0）当(dang)Vds=0时，在栅源之间加(jia)负(fu)(fu)(fu)电(dian)压Vgs，由于绝缘(yuan)层(ceng)(ceng)的(de)(de)(de)存在，故没有(you)电(dian)流，但是(shi)金属栅极(ji)被(bei)(bei)补充(chong)电(dian)而聚集负(fu)(fu)(fu)电(dian)荷(he)，Ｎ型半导(dao)体中的(de)(de)(de)多子(zi)电(dian)子(zi)被(bei)(bei)负(fu)(fu)(fu)电(dian)荷(he)排(pai)斥向体内运(yun)动，表(biao)面留下带正电(dian)的(de)(de)(de)离子(zi)，构(gou)(gou)成(cheng)(cheng)耗(hao)(hao)尽(jin)层(ceng)(ceng)，随着Ｇ、Ｓ间负(fu)(fu)(fu)电(dian)压的(de)(de)(de)增(zeng)加(jia)，耗(hao)(hao)尽(jin)层(ceng)(ceng)加(jia)宽，当(dang)Vgs增(zeng)大到一(yi)定值时，衬底中的(de)(de)(de)空穴（少子(zi)）被(bei)(bei)栅极(ji)中的(de)(de)(de)负(fu)(fu)(fu)电(dian)荷(he)吸收到表(biao)面，在耗(hao)(hao)尽(jin)层(ceng)(ceng)和绝缘(yuan)层(ceng)(ceng)之间构(gou)(gou)成(cheng)(cheng)一(yi)个Ｐ型薄层(ceng)(ceng)，称反(fan)型层(ceng)(ceng)，这(zhei)个反(fan)型层(ceng)(ceng)就构(gou)(gou)成(cheng)(cheng)漏源之间的(de)(de)(de)导(dao)电(dian)沟(gou)道，这(zhei)时的(de)(de)(de)Ｖgs称为开启电(dian)压Vgs（th），Vgs到Vgs（th）后再(zai)增(zeng)加(jia)，衬底表(biao)面感应(ying)的(de)(de)(de)空穴越多，反(fan)型层(ceng)(ceng)加(jia)宽，而耗(hao)(hao)尽(jin)层(ceng)(ceng)的(de)(de)(de)宽度(du)却不再(zai)变(bian)化，这(zhei)样(yang)我们可以用(yong)Vgs的(de)(de)(de)大小控制导(dao)电(dian)沟(gou)道的(de)(de)(de)宽度(du)。

p沟道mos管开关电路特性

PMOS的(de)(de)(de)(de)特性，Vgs小(xiao)于一定(ding)的(de)(de)(de)(de)值就会导(dao)通，适(shi)(shi)合用于源极(ji)接VCC时的(de)(de)(de)(de)情(qing)况（高(gao)端驱(qu)动）。需(xu)要(yao)注(zhu)意(yi)的(de)(de)(de)(de)是，Vgs指(zhi)的(de)(de)(de)(de)是栅(zha)极(ji)G与源极(ji)S的(de)(de)(de)(de)电(dian)压，即栅(zha)极(ji)低于电(dian)源一定(ding)电(dian)压就导(dao)通，而非相对于地(di)的(de)(de)(de)(de)电(dian)压。但(dan)是因(yin)为PMOS导(dao)通内阻(zu)比较大，所以只适(shi)(shi)用低功(gong)率(lv)的(de)(de)(de)(de)情(qing)况。大功(gong)率(lv)仍然使用N沟道MOS管。

p沟道mos管开关电路-电路分析

下面(mian)电路(lu)为P沟(gou)道MOS管用(yong)(yong)作电路(lu)切换开关使用(yong)(yong)电路(lu)：

电路(lu)分析如下：

p沟道(dao)mos管(guan)(guan)开关电(dian)(dian)(dian)路的(de)(de)(de)(de)开启条(tiao)件(jian)是(shi)(shi)VGS电(dian)(dian)(dian)压(ya)(ya)(ya)为(wei)负(fu)(fu)压(ya)(ya)(ya)，并且电(dian)(dian)(dian)压(ya)(ya)(ya)的(de)(de)(de)(de)绝对值大(da)于最低开启电(dian)(dian)(dian)压(ya)(ya)(ya)，一般小(xiao)功(gong)率(lv)的(de)(de)(de)(de)PMOS管(guan)(guan)的(de)(de)(de)(de)最小(xiao)开启电(dian)(dian)(dian)压(ya)(ya)(ya)为(wei)0.7V左(zuo)(zuo)(zuo)右(you)，假(jia)设(she)电(dian)(dian)(dian)池充(chong)满(man)电(dian)(dian)(dian)，电(dian)(dian)(dian)压(ya)(ya)(ya)为(wei)4.2V,VGS=-4.2V，P沟道(dao)MOS管(guan)(guan)是(shi)(shi)导(dao)(dao)通的(de)(de)(de)(de)，电(dian)(dian)(dian)路是(shi)(shi)没(mei)(mei)有问题的(de)(de)(de)(de)。当5V电(dian)(dian)(dian)压(ya)(ya)(ya)时(shi)，G极(ji)的(de)(de)(de)(de)电(dian)(dian)(dian)压(ya)(ya)(ya)为(wei)5V，S极(ji)的(de)(de)(de)(de)电(dian)(dian)(dian)压(ya)(ya)(ya)为(wei)5VV-二(er)极(ji)管(guan)(guan)压(ya)(ya)(ya)降（0.5左(zuo)(zuo)(zuo)右(you)）=4.5V，PMOS管(guan)(guan)关段(duan)，当没(mei)(mei)有5V电(dian)(dian)(dian)压(ya)(ya)(ya)时(shi)，G极(ji)电(dian)(dian)(dian)压(ya)(ya)(ya)下(xia)拉(la)为(wei)0V，S极(ji)的(de)(de)(de)(de)电(dian)(dian)(dian)压(ya)(ya)(ya)为(wei)电(dian)(dian)(dian)池电(dian)(dian)(dian)压(ya)(ya)(ya)（假(jia)设(she)电(dian)(dian)(dian)池充(chong)满(man)电(dian)(dian)(dian)4.2V）-MOS管(guan)(guan)未导(dao)(dao)通二(er)极(ji)管(guan)(guan)压(ya)(ya)(ya)降（0.5V）=3.7，这(zhei)(zhei)样PMOS就(jiu)(jiu)导(dao)(dao)通，二(er)极(ji)管(guan)(guan)压(ya)(ya)(ya)降就(jiu)(jiu)没(mei)(mei)有了这(zhei)(zhei)样VGS=-4.2V.PMOS管(guan)(guan)导(dao)(dao)通对负(fu)(fu)载供电(dian)(dian)(dian)。在这(zhei)(zhei)里用(yong)(yong)(yong)一个肖(xiao)特基(ji)二(er)极(ji)管(guan)(guan)（SS12）也可(ke)以(yi)解决这(zhei)(zhei)个问题，不(bu)过(guo)就(jiu)(jiu)是(shi)(shi)有0.3V左(zuo)(zuo)(zuo)右(you)的(de)(de)(de)(de)电(dian)(dian)(dian)压(ya)(ya)(ya)降。这(zhei)(zhei)里使用(yong)(yong)(yong)P沟道(dao)MOS管(guan)(guan)，P沟道(dao)MOS管(guan)(guan)完全(quan)导(dao)(dao)通，内阻(zu)(zu)比较小(xiao)，优与(yu)肖(xiao)特基(ji)，几乎没(mei)(mei)有压(ya)(ya)(ya)降。不(bu)过(guo)下(xia)拉(la)电(dian)(dian)(dian)阻(zu)(zu)使用(yong)(yong)(yong)的(de)(de)(de)(de)有点大(da)，驱(qu)动(dong)P沟道(dao)MOS不(bu)需要(yao)电(dian)(dian)(dian)流的(de)(de)(de)(de)，只(zhi)要(yao)电(dian)(dian)(dian)压(ya)(ya)(ya)达到(dao)就(jiu)(jiu)可(ke)以(yi)了，可(ke)以(yi)使用(yong)(yong)(yong)大(da)电(dian)(dian)(dian)阻(zu)(zu)，减少工作电(dian)(dian)(dian)流，推(tui)荐使用(yong)(yong)(yong)10K-100K左(zuo)(zuo)(zuo)右(you)的(de)(de)(de)(de)电(dian)(dian)(dian)阻(zu)(zu)。

MOS管(guan)(guan)的(de)(de)工(gong)作原理(以N沟(gou)道增强型MOS场效(xiao)应(ying)(ying)管(guan)(guan))它(ta)是利用VGS来控制“感应(ying)(ying)电(dian)(dian)(dian)荷(he)(he)”的(de)(de)多(duo)(duo)少(shao)，以改变由(you)这(zhei)些(xie)“感应(ying)(ying)电(dian)(dian)(dian)荷(he)(he)”形成的(de)(de)导电(dian)(dian)(dian)沟(gou)道的(de)(de)状况，然后达到控制漏(lou)极(ji)(ji)电(dian)(dian)(dian)流(liu)的(de)(de)目的(de)(de)。在制造管(guan)(guan)子时(shi)，通过工(gong)艺使绝缘层(ceng)中出现大(da)量正离子，故在交界面(mian)的(de)(de)另一侧(ce)能(neng)感应(ying)(ying)出较多(duo)(duo)的(de)(de)负(fu)电(dian)(dian)(dian)荷(he)(he)，这(zhei)些(xie)负(fu)电(dian)(dian)(dian)荷(he)(he)把高渗杂质的(de)(de)N区接通，形成了导电(dian)(dian)(dian)沟(gou)道，即使在VGS=0时(shi)也有(you)较大(da)的(de)(de)漏(lou)极(ji)(ji)电(dian)(dian)(dian)流(liu)ID。当栅极(ji)(ji)电(dian)(dian)(dian)压改变时(shi)，沟(gou)道内被感应(ying)(ying)的(de)(de)电(dian)(dian)(dian)荷(he)(he)量也改变，导电(dian)(dian)(dian)沟(gou)道的(de)(de)宽窄也随之而(er)变，因而(er)漏(lou)极(ji)(ji)电(dian)(dian)(dian)流(liu)ID随着栅极(ji)(ji)电(dian)(dian)(dian)压的(de)(de)变化(hua)而(er)变化(hua)。

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