当(dang)我(wo)们(men)的(de)(de)电(dian)路(lu)既(ji)可(ke)以(yi)由(you)外(wai)部(bu)USB电(dian)源(yuan)供电(dian)，也可(ke)以(yi)由(you)锂(li)(li)(li)电(dian)池(chi)(chi)供电(dian)时，我(wo)们(men)需要进行如(ru)...当(dang)我(wo)们(men)的(de)(de)电(dian)路(lu)既(ji)可(ke)以(yi)由(you)外(wai)部(bu)USB电(dian)源(yuan)供电(dian)，也可(ke)以(yi)由(you)锂(li)(li)(li)电(dian)池(chi)(chi)供电(dian)时，我(wo)们(men)需要进行如(ru)下的(de)(de)逻辑设置： 外(wai)部(bu)电(dian)源(yuan)供电(dian)时，断掉锂(li)(li)(li)电(dian)池(chi)(chi)的(de)(de)供电(dian)； 断开外(wai)部(bu)供电(dian)时，由(you)锂(li)(li)(li)电(dian)池(chi)(chi)供...
MOSFET驱(qu)动(dong)器(qi)是(shi)一款(kuan)高(gao)(gao)(gao)频高(gao)(gao)(gao)电(dian)(dian)压(ya)(ya)栅(zha)(zha)极驱(qu)动(dong)器(qi)，可(ke)利用一个(ge)同步 DC/DC 转换器(qi)和(he)(he)高(gao)(gao)(gao)达...MOSFET驱(qu)动(dong)器(qi)是(shi)一款(kuan)高(gao)(gao)(gao)频高(gao)(gao)(gao)电(dian)(dian)压(ya)(ya)栅(zha)(zha)极驱(qu)动(dong)器(qi)，可(ke)利用一个(ge)同步 DC/DC 转换器(qi)和(he)(he)高(gao)(gao)(gao)达 100V 的电(dian)(dian)源电(dian)(dian)压(ya)(ya)来驱(qu)动(dong)两个(ge) N 沟(gou)道 MOSFET。强大的驱(qu)动(dong)能力降低(di)了具高(gao)(gao)(gao)栅(zha)(zha)极电(dian)(dian)容 MOS...
1. 单端(duan)正(zheng)(zheng)(zheng)激(ji)(ji)式 单端(duan):通过一(yi)只(zhi)开关器(qi)(qi)件(jian)单向驱(qu)(qu)动脉冲(chong)(chong)变(bian)压(ya)(ya)(ya)器(qi)(qi). 正(zheng)(zheng)(zheng)激(ji)(ji):脉冲(chong)(chong)变(bian)压(ya)(ya)(ya)器(qi)(qi)的(de)...1. 单端(duan)正(zheng)(zheng)(zheng)激(ji)(ji)式 单端(duan):通过一(yi)只(zhi)开关器(qi)(qi)件(jian)单向驱(qu)(qu)动脉冲(chong)(chong)变(bian)压(ya)(ya)(ya)器(qi)(qi). 正(zheng)(zheng)(zheng)激(ji)(ji):脉冲(chong)(chong)变(bian)压(ya)(ya)(ya)器(qi)(qi)的(de)原/付(fu)边(bian)相(xiang)位(wei)关系，确保(bao)在开关管导(dao)通，驱(qu)(qu)动脉冲(chong)(chong)变(bian)压(ya)(ya)(ya)器(qi)(qi)原边(bian)时(shi)，变(bian)压(ya)(ya)(ya)器(qi)(qi)付(fu)边(bian)同时(shi)对负载(zai)...
图(tu)5-1、是(shi)一种最简单的整流(liu)电(dian)(dian)路。它由电(dian)(dian)源(yuan)变压(ya)器(qi)B 、整流(liu)二极管D 和负(fu)载电(dian)(dian)阻Rf...图(tu)5-1、是(shi)一种最简单的整流(liu)电(dian)(dian)路。它由电(dian)(dian)源(yuan)变压(ya)器(qi)B 、整流(liu)二极管D 和负(fu)载电(dian)(dian)阻Rfz ,组成。变压(ya)器(qi)把市电(dian)(dian)电(dian)(dian)压(ya)(多为220伏)变换为所需要的交变电(dian)(dian)压(ya)e2,D 再把交流(liu)电(dian)(dian)变换为...
不含杂(za)质的(de)半导(dao)(dao)体称为(wei)本征半导(dao)(dao)体。半导(dao)(dao)体硅和(he)锗(zhe)的(de)最外层(ceng)电子(zi)有四个，故(gu)而称它(ta)为(wei)...不含杂(za)质的(de)半导(dao)(dao)体称为(wei)本征半导(dao)(dao)体。半导(dao)(dao)体硅和(he)锗(zhe)的(de)最外层(ceng)电子(zi)有四个，故(gu)而称它(ta)为(wei)四价元(yuan)素，每(mei)一个外层(ceng)电子(zi)称为(wei)价电子(zi)。为(wei)了处于(yu)稳定状态，单(dan)晶硅和(he)单(dan)晶锗(zhe)中(zhong)的(de)每(mei)个原...
