上(shang)拉(la)电(dian)(dian)阻定义 1、上(shang)拉(la)就是将不(bu)确(que)定的信(xin)号(hao)通过一(yi)个电(dian)(dian)阻嵌位在高电(dian)(dian)平(ping)。“电(dian)(dian)阻同(tong)...上(shang)拉(la)电(dian)(dian)阻定义 1、上(shang)拉(la)就是将不(bu)确(que)定的信(xin)号(hao)通过一(yi)个电(dian)(dian)阻嵌位在高电(dian)(dian)平(ping)。“电(dian)(dian)阻同(tong)时(shi)起限流(liu)(liu)作用”下拉(la)同(tong)理。 2、上(shang)拉(la)是对器(qi)件注入电(dian)(dian)流(liu)(liu)，下拉(la)是输(shu)出电(dian)(dian)流(liu)(liu)。
1.什(shen)么是输(shu)(shu)入，什(shen)么是输(shu)(shu)出？判断输(shu)(shu)入和(he)(he)输(shu)(shu)出端(duan) 和(he)(he)电流方向是没有(you)关系的。接受(shou)外...1.什(shen)么是输(shu)(shu)入，什(shen)么是输(shu)(shu)出？判断输(shu)(shu)入和(he)(he)输(shu)(shu)出端(duan) 和(he)(he)电流方向是没有(you)关系的。接受(shou)外界信号改变(bian)的一端(duan)是输(shu)(shu)入端(duan)。由输(shu)(shu)入端(duan)引起的变(bian)化(hua)，就可以叫做输(shu)(shu)出。例(li)如：传感器(qi)要接...
可(ke)控(kong)硅可(ke)以(yi)是(shi)(shi)单向(xiang)的，也可(ke)以(yi)是(shi)(shi)双向(xiang)的，可(ke)以(yi)过零触发(fa)也可(ke)以(yi)移(yi)(yi)相触发(fa)，固(gu)态继(ji)电器(qi)...可(ke)控(kong)硅可(ke)以(yi)是(shi)(shi)单向(xiang)的，也可(ke)以(yi)是(shi)(shi)双向(xiang)的，可(ke)以(yi)过零触发(fa)也可(ke)以(yi)移(yi)(yi)相触发(fa)，固(gu)态继(ji)电器(qi)同样是(shi)(shi)如此的。 所以(yi)，他们的用(yong)途、形式(shi)都是(shi)(shi)一样类(lei)型(xing)产品，从这一点上（使用(yong)的形式(shi)...
电(dian)(dian)(dian)力晶(jing)体管按英(ying)文Giant Transistor——GTR，是一种耐高电(dian)(dian)(dian)压(ya)、大(da)(da)电(dian)(dian)(dian)流的双极结型...电(dian)(dian)(dian)力晶(jing)体管按英(ying)文Giant Transistor——GTR，是一种耐高电(dian)(dian)(dian)压(ya)、大(da)(da)电(dian)(dian)(dian)流的双极结型晶(jing)体管（Bipolar Junction Transistor—BJT），所以有时也称为Power BJT；但其驱动(dong)电(dian)(dian)(dian)...
当我(wo)们(men)的电(dian)(dian)(dian)(dian)路(lu)(lu)既可(ke)以(yi)(yi)由外部(bu)USB电(dian)(dian)(dian)(dian)源(yuan)供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)，也可(ke)以(yi)(yi)由锂(li)电(dian)(dian)(dian)(dian)池(chi)供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)时(shi)，我(wo)们(men)需(xu)要(yao)进行如...当我(wo)们(men)的电(dian)(dian)(dian)(dian)路(lu)(lu)既可(ke)以(yi)(yi)由外部(bu)USB电(dian)(dian)(dian)(dian)源(yuan)供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)，也可(ke)以(yi)(yi)由锂(li)电(dian)(dian)(dian)(dian)池(chi)供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)时(shi)，我(wo)们(men)需(xu)要(yao)进行如下(xia)的逻辑(ji)设置： 外部(bu)电(dian)(dian)(dian)(dian)源(yuan)供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)时(shi)，断(duan)掉锂(li)电(dian)(dian)(dian)(dian)池(chi)的供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)； 断(duan)开外部(bu)供(gong)(gong)(gong)(gong)电(dian)(dian)(dian)(dian)时(shi)，由锂(li)电(dian)(dian)(dian)(dian)池(chi)供(gong)(gong)(gong)(gong)...
MOSFET驱(qu)动(dong)(dong)器(qi)(qi)是一款(kuan)高(gao)频高(gao)电(dian)压栅极驱(qu)动(dong)(dong)器(qi)(qi)，可利用一个(ge)同步 DC/DC 转换(huan)器(qi)(qi)和高(gao)达...MOSFET驱(qu)动(dong)(dong)器(qi)(qi)是一款(kuan)高(gao)频高(gao)电(dian)压栅极驱(qu)动(dong)(dong)器(qi)(qi)，可利用一个(ge)同步 DC/DC 转换(huan)器(qi)(qi)和高(gao)达 100V 的(de)电(dian)源电(dian)压来驱(qu)动(dong)(dong)两个(ge) N 沟道 MOSFET。强大(da)的(de)驱(qu)动(dong)(dong)能力降低了具高(gao)栅极电(dian)容 MOS...
