用(yong)半(ban)桥(qiao)/全桥(qiao)驱(qu)动(dong)(dong)芯(xin)片和(he)(he)MOS管搭建合(he)适(shi)的(de)(de)H桥(qiao)电(dian)(dian)(dian)机(ji)驱(qu)动(dong)(dong)电(dian)(dian)(dian)路(lu)(lu)实现对大(da)电(dian)(dian)(dian)流电(dian)(dian)(dian)机(ji)的(de)(de)驱(qu)动(dong)(dong)...用(yong)半(ban)桥(qiao)/全桥(qiao)驱(qu)动(dong)(dong)芯(xin)片和(he)(he)MOS管搭建合(he)适(shi)的(de)(de)H桥(qiao)电(dian)(dian)(dian)机(ji)驱(qu)动(dong)(dong)电(dian)(dian)(dian)路(lu)(lu)实现对大(da)电(dian)(dian)(dian)流电(dian)(dian)(dian)机(ji)的(de)(de)驱(qu)动(dong)(dong)控(kong)制。该电(dian)(dian)(dian)机(ji)驱(qu)动(dong)(dong)板有两(liang)个H桥(qiao)电(dian)(dian)(dian)路(lu)(lu)，可(ke)(ke)以同时控(kong)制双(shuang)路(lu)(lu)电(dian)(dian)(dian)机(ji)。可(ke)(ke)通过(guo)相应的(de)(de)控(kong)制信号来控(kong)...
Vov：过(guo)驱(qu)(qu)动(dong)(dong)电压(ya)(ya)overdrive voltage，Vov=Vgs-Vth，过(guo)驱(qu)(qu)动(dong)(dong)电压(ya)(ya)也(ye)(ye)用Vod表(biao)示 Vds...Vov：过(guo)驱(qu)(qu)动(dong)(dong)电压(ya)(ya)overdrive voltage，Vov=Vgs-Vth，过(guo)驱(qu)(qu)动(dong)(dong)电压(ya)(ya)也(ye)(ye)用Vod表(biao)示 Vdsat:饱(bao)和漏(lou)(lou)源电压(ya)(ya)或夹断(duan)时漏(lou)(lou)源电压(ya)(ya)（刚出现夹断(duan)）saturation drain voltage
MOS管(guan)2810 参(can)数(shu)100V150A产(chan)品(pin)特点 RDS(on)=5.0mΩ@VGS=10V 超(chao)(chao)高密度电(dian)池(chi)设计 ...MOS管(guan)2810 参(can)数(shu)100V150A产(chan)品(pin)特点 RDS(on)=5.0mΩ@VGS=10V 超(chao)(chao)高密度电(dian)池(chi)设计 超(chao)(chao)低导通(tong)电(dian)阻 雪崩(beng)测(ce)试100% 提供无铅和绿色设备（符合RoHS）
功率管开(kai)关管箝位(wei)电(dian)(dian)路原理如图(tu)1所示(shi)(shi)，当(dang)开(kai)关管Q开(kai)通时,电(dian)(dian)容Cs两(liang)端压(ya)降(jiang)为晶体(ti)管...功率管开(kai)关管箝位(wei)电(dian)(dian)路原理如图(tu)1所示(shi)(shi)，当(dang)开(kai)关管Q开(kai)通时,电(dian)(dian)容Cs两(liang)端压(ya)降(jiang)为晶体(ti)管饱和压(ya)降(jiang),接近于零。开(kai)关管关断时,二极管将电(dian)(dian)阻Rs短路为电(dian)(dian)感(gan)电(dian)(dian)流(liu)iL提供放电(dian)(dian)通道，电(dian)(dian)...
高边（HS）MOSFET则(ze)通过(guo)RG_EXT连(lian)接栅(zha)极(ji)(ji)引(yin)脚(jiao)(jiao)和源极(ji)(ji)引(yin)脚(jiao)(jiao)或驱动(dong)(dong)器源极(ji)(ji)引(yin)脚(jiao)(jiao)，并且仅...高边（HS）MOSFET则(ze)通过(guo)RG_EXT连(lian)接栅(zha)极(ji)(ji)引(yin)脚(jiao)(jiao)和源极(ji)(ji)引(yin)脚(jiao)(jiao)或驱动(dong)(dong)器源极(ji)(ji)引(yin)脚(jiao)(jiao)，并且仅用于体(ti)二极(ji)(ji)管的换流工作。在电路图中，实(shi)线是连(lian)接到源极(ji)(ji)引(yin)脚(jiao)(jiao)的示意图，虚(xu)线是连(lian)接到...
下(xia)图(tu)中的(de)电(dian)路(lu)不难(nan)在(zai)面包板(ban)上(shang)搭出来，最好把(ba)功率(lv)器件（PROFET或MOSFET）单(dan)独(du)放在(zai)...下(xia)图(tu)中的(de)电(dian)路(lu)不难(nan)在(zai)面包板(ban)上(shang)搭出来，最好把(ba)功率(lv)器件（PROFET或MOSFET）单(dan)独(du)放在(zai)一块板(ban)上(shang)，并配上(shang)散热器。看看后面的(de)实(shi)物电(dian)路(lu)照片，功率(lv)器件必(bi)须要和供电(dian)电(dian)源或者(zhe)蓄...
