总功率损耗Ptot的(de)定义(yi)是：在(zai)(zai)焊接衬底温度(du)(du)维持在(zai)(zai)25℃时(shi)，器(qi)件达到最大结点温度(du)(du)时(shi)...总功率损耗Ptot的(de)定义(yi)是：在(zai)(zai)焊接衬底温度(du)(du)维持在(zai)(zai)25℃时(shi)，器(qi)件达到最大结点温度(du)(du)时(shi)所用(yong)(yong)的(de)功率。可以用(yong)(yong)公式(shi)Tj=Tmb+Rth_j-mb*Ptot来表(biao)达，节点温度(du)(du)才是最终的(de)MOSFET是否...
如果(guo)可(ke)(ke)以把电(dian)流(liu)(liu)始终限制在I_SET以下，可(ke)(ke)以去掉限流(liu)(liu)电(dian)阻，让电(dian)流(liu)(liu)保(bao)持(chi)略(lve)小于I_SE...如果(guo)可(ke)(ke)以把电(dian)流(liu)(liu)始终限制在I_SET以下，可(ke)(ke)以去掉限流(liu)(liu)电(dian)阻，让电(dian)流(liu)(liu)保(bao)持(chi)略(lve)小于I_SET，快速充电(dian)。如下图，电(dian)流(liu)(liu)曲线(xian)的积分(fen)为V_CL，左右两图的阴影面积大(da)小相同(tong)，可(ke)(ke)以看出...
共(gong)(gong)(gong)源(yuan)(yuan)共(gong)(gong)(gong)栅(zha)(zha)级(ji)(ji)由(you)共(gong)(gong)(gong)源(yuan)(yuan)级(ji)(ji)实(shi)现电(dian)压(ya)到(dao)(dao)电(dian)流的转(zhuan)换(huan)，然后电(dian)流信(xin)号加到(dao)(dao)共(gong)(gong)(gong)栅(zha)(zha)级(ji)(ji)的源(yuan)(yuan)端。因此(ci)...共(gong)(gong)(gong)源(yuan)(yuan)共(gong)(gong)(gong)栅(zha)(zha)级(ji)(ji)由(you)共(gong)(gong)(gong)源(yuan)(yuan)级(ji)(ji)实(shi)现电(dian)压(ya)到(dao)(dao)电(dian)流的转(zhuan)换(huan)，然后电(dian)流信(xin)号加到(dao)(dao)共(gong)(gong)(gong)栅(zha)(zha)级(ji)(ji)的源(yuan)(yuan)端。因此(ci)，构(gou)成(cheng)共(gong)(gong)(gong)源(yuan)(yuan)共(gong)(gong)(gong)栅(zha)(zha)级(ji)(ji)时共(gong)(gong)(gong)源(yuan)(yuan)管和(he)共(gong)(gong)(gong)栅(zha)(zha)管类型可以不同。如图(tu)3.0.2.1，M1是(shi)输入器件：PMOS...
当使用(yong)5V电(dian)源(yuan)，这时(shi)候如(ru)果(guo)(guo)使用(yong)传(chuan)统(tong)的图腾柱结构，由于三极(ji)管的be有(you)(you)0.7V左(zuo)右的压(ya)...当使用(yong)5V电(dian)源(yuan)，这时(shi)候如(ru)果(guo)(guo)使用(yong)传(chuan)统(tong)的图腾柱结构，由于三极(ji)管的be有(you)(you)0.7V左(zuo)右的压(ya)降，导致实际最终加在gate上(shang)的电(dian)压(ya)只(zhi)有(you)(you)4.3V。这时(shi)候，我们选(xuan)用(yong)标(biao)称gate电(dian)压(ya)4.5V的场(chang)...
左图(tu)中是直接耦合(he)的(de)共栅(zha)级(ji)，V b接固定电(dian)(dian)(dian)位(wei)，以电(dian)(dian)(dian)阻R D为(wei)负载。右图(tu)为(wei)小信号等(deng)效(xiao)...左图(tu)中是直接耦合(he)的(de)共栅(zha)级(ji)，V b接固定电(dian)(dian)(dian)位(wei)，以电(dian)(dian)(dian)阻R D为(wei)负载。右图(tu)为(wei)小信号等(deng)效(xiao)电(dian)(dian)(dian)路（做图(tu)水平(ping)拙劣(lie)），栅(zha)极接地，漏(lou)端输(shu)出。该图(tu)的(de)输(shu)出电(dian)(dian)(dian)阻（V i n = 0时(shi)两压控电(dian)(dian)(dian)...
场效(xiao)应(ying)管(guan)分为增强(qiang)型(xing)(xing)（常(chang)开型(xing)(xing)）和(he)耗尽(jin)型(xing)(xing)（常(chang)闭型(xing)(xing)），增强(qiang)型(xing)(xing)的管(guan)子(zi)是需要(yao)加电压(ya)才(cai)...场效(xiao)应(ying)管(guan)分为增强(qiang)型(xing)(xing)（常(chang)开型(xing)(xing)）和(he)耗尽(jin)型(xing)(xing)（常(chang)闭型(xing)(xing)），增强(qiang)型(xing)(xing)的管(guan)子(zi)是需要(yao)加电压(ya)才(cai)能导(dao)通(tong)的，而耗尽(jin)型(xing)(xing)管(guan)子(zi)本来就处于导(dao)通(tong)状(zhuang)态(tai)，加栅源电压(ya)是为了使其截止。
